Document
FCA76N60N — N-Channel SupreMOS® MOSFET
FCA76N60N
N-Channel SupreMOS® MOSFET
600 V, 76 A, 36 mΩ
Sept 2017
Features
• RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 218 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) • 100% Avalanche Tested • RoHS Compliant
Application
• Solar Inverter • AC-DC Power Supply
Description
The SupreMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D
G
G D S
TO-3PN
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol VDSS VGSS
ID
IDM EAS IAR EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 1) (Note 2) (Note 1) (Note 1) (Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FCA76N60N 600 ±30 76 48.1 228 8022 76 5.40 100 12 543 5.40
-55 to +150 300
Unit V V
A
A mJ A mJ
V/ns
W W/oC
oC oC
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
FCA76N60N 0.23 40
Unit oC/W
©2010 Semiconductor Components Industries, LLC. FCA76N60N Rev. 1
1
www.onsemi.com
FCA76N60N — N-Channel SupreMOS® MOSFET
Package Marking and Ordering Information
Part Number FCA76N60N
Top Mark FCA76N60N
Package TO-3PN
Packing Method Tube
Reel Size N/A
Tape Width N/A
Quantity 30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS ΔBVDSS / ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 1 mA, VGS = 0 V,TJ = 25oC ID = 1 mA, Referenced to 25oC
VDS = 480 V, VGS = 0 V VDS = 480 V, TJ = 125oC VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th) RDS(on) gFS
Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance
VGS = VDS, ID = 250 μA VGS = 10 V, ID = 38 A VDS = 20 V, ID = 38 A
Dynamic Characteristics
Ciss Coss Crss Coss Coss(eff.) Qg(tot) Qgs
Qgd
ESR
Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 100 V, VGS = 0 V, f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz VDS = 0 V to 380 V, VGS = 0 V
VDS = 380 V, ID = 38 A, VGS = 10 V f = 1 MHz
(Note 4)
Min.
600 -
2.0 -
-
Switching Characteristics
td(on) tr td(off) tf
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDD = 380 V, ID = 38 A, VGS = 10 V, RG = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 38 A
trr Reverse Recovery Time Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 38 A, dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 25.3 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 76 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
Typ. Max. Unit
-
0.73
-
-
-
10 100 ±100
V V/oC
μA nA
- 4.0 V 28.5 36.0 mΩ
88 - S
9310 370 3.1 196 914 218 39
66
1.0
12385 495 5.0 285 -
-
-
pF pF pF pF pF nC nC
nC
Ω
34 78 ns 24 58 ns 235 480 ns 32 74 ns
- 76 A - 228 A - 1.2 V 613 - ns 16 - μC
©2010 Semiconductor Components Industries, LLC. FCA76N60N Rev. 1
2
www.onsemi.com
FCA76N60N — N-Channel SupreMOS® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
1000 100
VGS = 15.0 V 10.0 V 6.0 V 5.5 V 5.0 V 4.5 V
ID, Drain Current[A]
RDS(ON) [mΩ], Drain-Source On-Resistance
10
*Notes: 1. 250μs Pulse Test 2. TC = 25oC
1 0.1 1 10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
50
45
40
35 30 25
0
VGS = 10V
VGS = 20V
*Notes: TC = 25oC
50 100 150 200 250 300 ID, Drain Current [A]
Figure 5. Capacitance Characteristics
100000
10000
Ciss
1000
Coss
100 *Notes:
1. VGS = 0V
2. f =.