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FCA76N60N Dataheets PDF



Part Number FCA76N60N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel SupreMOS MOSFET
Datasheet FCA76N60N DatasheetFCA76N60N Datasheet (PDF)

FCA76N60N — N-Channel SupreMOS® MOSFET FCA76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ Sept 2017 Features • RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 218 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep t.

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FCA76N60N — N-Channel SupreMOS® MOSFET FCA76N60N N-Channel SupreMOS® MOSFET 600 V, 76 A, 36 mΩ Sept 2017 Features • RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 218 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Description The SupreMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G D S TO-3PN MOSFET Maximum Ratings TC = 25oC unless otherwise noted. S Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FCA76N60N 600 ±30 76 48.1 228 8022 76 5.40 100 12 543 5.40 -55 to +150 300 Unit V V A A mJ A mJ V/ns W W/oC oC oC Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FCA76N60N 0.23 40 Unit oC/W ©2010 Semiconductor Components Industries, LLC. FCA76N60N Rev. 1 1 www.onsemi.com FCA76N60N — N-Channel SupreMOS® MOSFET Package Marking and Ordering Information Part Number FCA76N60N Top Mark FCA76N60N Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1 mA, VGS = 0 V,TJ = 25oC ID = 1 mA, Referenced to 25oC VDS = 480 V, VGS = 0 V VDS = 480 V, TJ = 125oC VGS = ±30 V, VDS = 0 V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 μA VGS = 10 V, ID = 38 A VDS = 20 V, ID = 38 A Dynamic Characteristics Ciss Coss Crss Coss Coss(eff.) Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Equivalent Series Resistance (G-S) VDS = 100 V, VGS = 0 V, f = 1 MHz VDS = 380 V, VGS = 0 V, f = 1 MHz VDS = 0 V to 380 V, VGS = 0 V VDS = 380 V, ID = 38 A, VGS = 10 V f = 1 MHz (Note 4) Min. 600 - 2.0 - - Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380 V, ID = 38 A, VGS = 10 V, RG = 4.7 Ω Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current ISM Maximum Pulsed Drain to Source Diode Forward Current VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 38 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 38 A, dIF/dt = 100 A/μs Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 25.3 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 76 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. (Note 4) - - Typ. Max. Unit - 0.73 - - - 10 100 ±100 V V/oC μA nA - 4.0 V 28.5 36.0 mΩ 88 - S 9310 370 3.1 196 914 218 39 66 1.0 12385 495 5.0 285 - - - pF pF pF pF pF nC nC nC Ω 34 78 ns 24 58 ns 235 480 ns 32 74 ns - 76 A - 228 A - 1.2 V 613 - ns 16 - μC ©2010 Semiconductor Components Industries, LLC. FCA76N60N Rev. 1 2 www.onsemi.com FCA76N60N — N-Channel SupreMOS® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 1000 100 VGS = 15.0 V 10.0 V 6.0 V 5.5 V 5.0 V 4.5 V ID, Drain Current[A] RDS(ON) [mΩ], Drain-Source On-Resistance 10 *Notes: 1. 250μs Pulse Test 2. TC = 25oC 1 0.1 1 10 20 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 50 45 40 35 30 25 0 VGS = 10V VGS = 20V *Notes: TC = 25oC 50 100 150 200 250 300 ID, Drain Current [A] Figure 5. Capacitance Characteristics 100000 10000 Ciss 1000 Coss 100 *Notes: 1. VGS = 0V 2. f =.


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