FCH077N65F-F085 MOSFET Datasheet

FCH077N65F-F085 Datasheet, PDF, Equivalent


Part Number

FCH077N65F-F085

Description

N-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 10 Pages
Datasheet
Download FCH077N65F-F085 Datasheet


FCH077N65F-F085
MOSFET – N-Channel,
SUPERFET) II, FRFET)
650 V, 54 A, 77 mW
FCH077N65F-F085
Description
SuperFET II MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, dv/dt rate
and higher avalanche energy. Consequently SuperFET II is very well
suited for the Soft switching and Hard Switching topologies like High
Voltage Full Bridge and Half Bridge DCDC, Interleaved Boost PFC,
Boost PFC for HEVEV automotive.
SuperFET II FRFET MOSFET’s optimized body diode reverse
recovery performance can remove additional component and improve
system reliability.
Features
Typ. RDS(on) = 68 mW at VGS = 10 V, ID = 27 A
Typ. Qg(tot) = 126 nC at VGS = 10 V, ID = 27 A
UIS Capability
AECQ101 Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
www.onsemi.com
VDS
650 V
RDS(ON) MAX
77 mW @ 10 V
D
ID MAX
54 A
G
S
N-CHANNEL MOSFET
SD
G
TO2473LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH077N65F
F085
© Semiconductor Components Industries, LLC, 2014
November, 2019 Rev. 3
$Y
&Z
&3
&K
FCH077N65FF085
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1 Publication Order Number:
FCH077N65FF085/D

FCH077N65F-F085
FCH077N65FF085
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (VGS = 10) (Note 1)
Pulsed Drain Current
650
±20
54
See Fig. 4
V
V
A
A
EAS
dv/dt
Single Pulsed Avalanche Rating (Note 2)
MOSFET dv/dt
1128
100
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
PD Power Dissipation
Derate Above 25°C
481 W
3.85 W/°C
TJ, TSTG
Operating and Storage Temperature Range
55 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
2. Starting TJ = 25 °C, L = 18.65 mH, IAS = 11 A, VDD = 100 V during inductor charging and VDD = 0 V during time in avalanche.
3. ISD 27 A, di/dt 200 A/ms, VDD 380 V, starting TJ = 25 °C.
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
FCH077N65F
FCH077N65FF085
Package
TO2473
Reel Size
Tape Width
Quantity
30 Units
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
RqJC
Thermal Resistance, Junction to Case, Max.
0.26 °C/W
RqJA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
40
4. RqJA is the sum of the junctiontocase and casetoambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
dornaminopuinnsti.ngRqoJnCais1ginu2arpaandteoefd2obzy
design,
copper.
while
RqJA
is
determined
by
the
board
design.
The
maximum
rating
www.onsemi.com
2


Features MOSFET – N-Channel, SUPERFET) II, FRFE T) 650 V, 54 A, 77 mW FCH077N65F-F085 D escription SuperFET II MOSFET is ON Sem iconductor’s brand−new high voltage super−junction (SJ) MOSFET family th at is utilizing charge balance technolo gy for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize con duction loss, provide superior switchin g performance, dv/dt rate and higher av alanche energy. Consequently SuperFET I I is very well suited for the Soft swit ching and Hard Switching topologies lik e High Voltage Full Bridge and Half Bri dge DC−DC, Interleaved Boost PFC, Boo st PFC for HEV−EV automotive. SuperFE T II FRFET MOSFET’s optimized body di ode reverse recovery performance can re move additional component and improve s ystem reliability. Features • Typ. RD S(on) = 68 mW at VGS = 10 V, ID = 27 A • Typ. Qg(tot) = 126 nC at VGS = 10 V , ID = 27 A • UIS Capability • AEC Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Appl.
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