Document
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
FGA25S125P
1250 V, 25 A Shorted-anode IGBT
Features
• High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A • High Input Impedance • RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven.
C
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES VGES IC
ICM (1) IF
PD
TJ Tstg TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature
@ TC = 25oC @ TC = 100oC
@ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Parameter
Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max
Notes: 1: Limited by Tjmax
G E
FGA25S125P-SN00337
1250 25 50 25 75 50 25 250 125 -55 to +175 -55 to +175
300
Typ.
-
Max.
0.6 40
Unit
V V A A A A A W W oC oC
oC
Unit
oC/W oC/W
©2012 Semiconductor Components Industries, LLC. October-2017,Rev. 2
Publication Order Number: FGA25S125P/D
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
Package Marking and Ordering Information
Device Marking
FGA25S125P
Device
FGA25S125P -SN00337
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
Temperature Coefficient of Breakdown Voltage
VGE = 0 V, IC = 1mA
Collector Cut-Off Current G-E Leakage Current
VCE = 1250V, VGE = 0V VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
VFM Diode Forward Voltage
IC = 25mA, VCE = VGE IC = 25A, VGE = 15V TC = 25oC IC = 25A, VGE = 15V TC = 125oC IC = 25A, VGE = 15V, TC = 175oC IF = 25A, TC = 25oC IF = 25A, TC = 175oC
1250
-
-
V
- 1.2 - V/oC
- - 1 mA
-
-
±500
nA
4.5 6.0 7.5 - 1.8 2.35
- 2.05 -
- 2.16 - 1.7 2.4 - 2.1 -
V V
V
V V V
Dynamic Characteristics
Cies Coes Cres
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge
VCE = 30V, VGE = 0V, f = 1MHz
VCC = 600V, IC = 25A, RG = 10, VGE = 15V, Resistive Load, TC = 25oC
VCC = 600V, IC = 25A, RG = 10, VGE = 15V, Resistive Load,, TC = 175oC
VCE = 600V, IC = 25A, VGE = 15V
- 2150 - 48 - 36 -
pF pF pF
- 24 - 250 - 502 - 138 - 1085 - 580 - 1665 - 21.2 - 304 - 490 - 232 - 1310 - 952 - 2262 - 204 - 15 - 103 -
ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC
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FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200 TC = 25oC
20V
15V
160 VGE=17V
120 12V
Collector Current, Ic [A]
80 10V
40
0 0.0
9V
8V 7V
2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V]
10.0
Figure 3. Typical Saturation Voltage Characteristics
200
Common Emitter VGE = 15V 160 TC = 25oC TC = 175oC ---
120
Figure 2. Typical Output Characteristics
200 TC = 175oC
20V 17V
160 15V
Collector Current, IC [A]
120
80
40
0 0.0
12V
VGE = 7V
10V 9V 8V
2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V]
10.0
Figure 4. Transfer Characteristics
100 Common Emitter VCE = 20V
80 TC = 25oC TC = 175oC
60
Collector Current, IC [A]
Collector Current, IC [A]
80 40
40 20
0 0.0
1.0 2.0 3.0 4.0 5.0 Collector-Emitter Voltage, VCE [V]
6.0
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
3.5 Common Emitter VGE = 15V
3.0
50A 2.5
Collector-Emitter Voltage, VCE [V]
2.0
1.5
1.0 25
25A
IC = 12.5A
50 75 100 125 150 Case Temperature, TC [oC]
175
0 0 3 6 9 12 15 Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20 Common Emitter TC = 25oC
15
Collector-Emitter Voltage, VCE [V]
10 25A
IC = 12.5A 5
50A
0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V]
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FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
Typical Perfor.