FGA25S125P IGBT Datasheet

FGA25S125P Datasheet, PDF, Equivalent


Part Number

FGA25S125P

Description

25A Shorted-anode IGBT

Manufacture

ON Semiconductor

Total Page 7 Pages
Datasheet
Download FGA25S125P Datasheet


FGA25S125P
FGA25S125P
1250 V, 25 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, ON Semiconductor's shorted-anode trench IGBTs offer
superior con-duction and switching performances for
soft switching applications. The device can operate in
parallel configuration with exceptional avalanche capability .
This device is designed for induction heating and microwave
oven.
C
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
Notes:
1: Limited by Tjmax
G
E
FGA25S125P-SN00337
1250
25
50
25
75
50
25
250
125
-55 to +175
-55 to +175
300
Typ.
-
-
Max.
0.6
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2012 Semiconductor Components Industries, LLC.
October-2017,Rev. 2
Publication Order Number:
FGA25S125P/D

FGA25S125P
Package Marking and Ordering Information
Device Marking
FGA25S125P
Device
FGA25S125P
-SN00337
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1mA
Collector Cut-Off Current
G-E Leakage Current
VCE = 1250V, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
VFM Diode Forward Voltage
IC = 25mA, VCE = VGE
IC = 25A, VGE = 15V
TC = 25oC
IC = 25A, VGE = 15V
TC = 125oC
IC = 25A, VGE = 15V,
TC = 175oC
IF = 25A, TC = 25oC
IF = 25A, TC = 175oC
1250
-
-
V
- 1.2 - V/oC
- - 1 mA
-
-
±500
nA
4.5 6.0 7.5
- 1.8 2.35
- 2.05 -
- 2.16 -
- 1.7 2.4
- 2.1 -
V
V
V
V
V
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 600V, IC = 25A,
RG = 10, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 600V, IC = 25A,
RG = 10, VGE = 15V,
Resistive Load,, TC = 175oC
VCE = 600V, IC = 25A,
VGE = 15V
- 2150 -
- 48 -
- 36 -
pF
pF
pF
- 24 -
- 250 -
- 502 -
- 138 -
- 1085 -
- 580 -
- 1665 -
- 21.2 -
- 304 -
- 490 -
- 232 -
- 1310 -
- 952 -
- 2262 -
- 204 -
- 15 -
- 103 -
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
www.onsemi.com
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Features FGA25S125P — 1250 V, 25 A Shorted-anod e IGBT FGA25S125P 1250 V, 25 A Shorted -anode IGBT Features • High Speed Sw itching • Low Saturation Voltage: VCE (sat) = 1.8 V @ IC = 25 A • High Inpu t Impedance • RoHS Compliant Applicat ions • Induction Heating, Microwave O ven General Description Using advanced field stop trench and shorted-anode te chnology, ON Semiconductor's shorted-an ode trench IGBTs offer superior con-duc tion and switching performances for sof t switching applications. The device ca n operate in parallel configuration wit h exceptional avalanche capability . Th is device is designed for induction hea ting and microwave oven. C G CE TO-3 PN Absolute Maximum Ratings Symbol VC ES VGES IC ICM (1) IF PD TJ Tstg TL De scription Collector to Emitter Voltage Gate to Emitter Voltage Collector Cur rent Collector Current Pulsed Collector Current Diode Continuous Forward Curre nt Diode Continuous Forward Current Max imum Power Dissipation Maximum Power Dissipation Operating Junction Tempera.
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