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FGA25S125P Dataheets PDF



Part Number FGA25S125P
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description 25A Shorted-anode IGBT
Datasheet FGA25S125P DatasheetFGA25S125P Datasheet (PDF)

FGA25S125P — 1250 V, 25 A Shorted-anode IGBT FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can op.

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FGA25S125P — 1250 V, 25 A Shorted-anode IGBT FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, ON Semiconductor's shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven. C G CE TO-3PN Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max Notes: 1: Limited by Tjmax G E FGA25S125P-SN00337 1250  25 50 25 75 50 25 250 125 -55 to +175 -55 to +175 300 Typ. - Max. 0.6 40 Unit V V A A A A A W W oC oC oC Unit oC/W oC/W ©2012 Semiconductor Components Industries, LLC. October-2017,Rev. 2 Publication Order Number: FGA25S125P/D FGA25S125P — 1250 V, 25 A Shorted-anode IGBT Package Marking and Ordering Information Device Marking FGA25S125P Device FGA25S125P -SN00337 Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES BVCES TJ ICES IGES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = 1250V, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage VFM Diode Forward Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V TC = 25oC IC = 25A, VGE = 15V TC = 125oC IC = 25A, VGE = 15V, TC = 175oC IF = 25A, TC = 25oC IF = 25A, TC = 175oC 1250 - - V - 1.2 - V/oC - - 1 mA - - ±500 nA 4.5 6.0 7.5 - 1.8 2.35 - 2.05 - - 2.16 - 1.7 2.4 - 2.1 - V V V V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 30V, VGE = 0V, f = 1MHz VCC = 600V, IC = 25A, RG = 10, VGE = 15V, Resistive Load, TC = 25oC VCC = 600V, IC = 25A, RG = 10, VGE = 15V, Resistive Load,, TC = 175oC VCE = 600V, IC = 25A, VGE = 15V - 2150 - 48 - 36 - pF pF pF - 24 - 250 - 502 - 138 - 1085 - 580 - 1665 - 21.2 - 304 - 490 - 232 - 1310 - 952 - 2262 - 204 - 15 - 103 - ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC www.onsemi.com 2 FGA25S125P — 1250 V, 25 A Shorted-anode IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 200 TC = 25oC 20V 15V 160 VGE=17V 120 12V Collector Current, Ic [A] 80 10V 40 0 0.0 9V 8V 7V 2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V] 10.0 Figure 3. Typical Saturation Voltage Characteristics 200 Common Emitter VGE = 15V 160 TC = 25oC TC = 175oC --- 120 Figure 2. Typical Output Characteristics 200 TC = 175oC 20V 17V 160 15V Collector Current, IC [A] 120 80 40 0 0.0 12V VGE = 7V 10V 9V 8V 2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V] 10.0 Figure 4. Transfer Characteristics 100 Common Emitter VCE = 20V 80 TC = 25oC TC = 175oC 60 Collector Current, IC [A] Collector Current, IC [A] 80 40 40 20 0 0.0 1.0 2.0 3.0 4.0 5.0 Collector-Emitter Voltage, VCE [V] 6.0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.5 Common Emitter VGE = 15V 3.0 50A 2.5 Collector-Emitter Voltage, VCE [V] 2.0 1.5 1.0 25 25A IC = 12.5A 50 75 100 125 150 Case Temperature, TC [oC] 175 0 0 3 6 9 12 15 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 20 Common Emitter TC = 25oC 15 Collector-Emitter Voltage, VCE [V] 10 25A IC = 12.5A 5 50A 0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] www.onsemi.com 3 FGA25S125P — 1250 V, 25 A Shorted-anode IGBT Typical Perfor.


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