FQH44N10 MOSFET Datasheet

FQH44N10 Datasheet, PDF, Equivalent


Part Number

FQH44N10

Description

N-Channel QFET MOSFET

Manufacture

ON Semiconductor

Total Page 8 Pages
Datasheet
Download FQH44N10 Datasheet


FQH44N10
FQH44N10
N-Channel QFET® MOSFET
100 V, 48 A, 39 m
Description
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
• 48 A, 100 V, RDS(on) = 39 m(Max.) @ VGS = 10 V,
ID = 24 A
• Low Gate Charge (Typ. 48 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating
D
G
D
S
TO-247
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
G
S
FQH44N10-F133
100
48
34
192
25
530
48
18
6.0
180
1.2
-55 to +175
300
FQH44N10-F133
0.83
0.24
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2008 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FQH44N10-F133/D

FQH44N10
Package Marking and Ordering Information
Part Number
FQH44N10-F133
Top Mark
FQH44N10
Package
TO-247
Packing Method Reel Size
Tube
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
100 --
--
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 A, Referenced to 25°C --
0.1
--
IDSS Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
-- --
1
-- -- 10
IGSSF
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
-- -- 100
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- -- -100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 A
VGS = 10 V, ID = 24 A
2.0 --
4.0
-- 0.03 0.039
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 24 A
-- 31
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1400 1800
-- 425 550
-- 85 110
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 50 V, ID = 43.5 A,
RG = 25
-- 19
45
-- 190 390
-- 90 190
(Note 4)
--
100
210
VDS = 80 V, ID = 43.5 A,
-- 48
62
VGS = 10 V
-- 9.0
--
(Note 4) --
24
--
Unit
V
V/°C
A
A
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 48 A
trr Reverse Recovery Time
VGS = 0 V, IS = 43.5 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/s

1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 0.345 mH, IAS = 48 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 43.5 A, di/dt 300 A/µs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
-- --
48
-- -- 192
-- -- 1.5
-- 98
--
-- 360
--
A
A
V
ns
nC
www.onsemi.com
2


Features FQH44N10 — N-Channel QFET® MOSFET FQ H44N10 N-Channel QFET® MOSFET 100 V, 4 8 A, 39 mΩ Description This N-Channe l enhancement mode power MOSFET is prod uced using ON Semiconductor’s proprie tary planar stripe and DMOS technology. This advanced MOSFET technology has be en especially tailored to reduce on-sta te resistance, and to provide superior switching performance and high avalanch e energy strength. These devices are su itable for switched mode power supplies , audio amplifier, DC motor control, an d variable switching power applications . Features • 48 A, 100 V, RDS(on) = 39 m (Max.) @ VGS = 10 V, ID = 24 A • Low Gate Charge (Typ. 48 nC) • Lo w Crss (Typ. 85 pF) • 100% Avalanche Tested • 175C Maximum Junction Tem perature Rating D G D S TO-247 Absol ute Maximum Ratings TC = 25oC unless ot herwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-S ource Voltage Drain Current - Continu ous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltag.
Keywords FQH44N10, datasheet, pdf, ON Semiconductor, N-Channel, QFET, MOSFET, QH44N10, H44N10, 44N10, FQH44N1, FQH44N, FQH44, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)