BTC5658Y3 Transistor Datasheet

BTC5658Y3 Datasheet, PDF, Equivalent


Part Number

BTC5658Y3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTC5658Y3 Datasheet


BTC5658Y3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC5658Y3
Spec. No. : C204Y3
Issued Date : 2011.11.03
Revised Date : 2019.02.20
Page No. : 1/7
Description
The BTC5658Y3 is designed for use in driver stage of AF amplifier and low speed switching.
Complementary to BTA2029Y3.
Pb-free lead plating and halogen-free package.
Symbol
BTC5658Y3
Outline
SOT-723
C
BBase
CCollector
EEmitter
BE
Ordering Information
Device
BTC5658Y3-X-T5-G
Package
SOT-723
(Pb-free lead plating and halogen-free package)
Shipping
8000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T5 : 8000 pcs / tape & reel, 7reel
Product rank, zero for no rank products
Product name
BTC5658Y3
CYStek Product Specification

BTC5658Y3
CYStech Electronics Corp.
Spec. No. : C204Y3
Issued Date : 2011.11.03
Revised Date : 2019.02.20
Page No. : 2/7
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @Ta=25
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Limits
60
50
7
150
150
-55~+150
-55~+150
Unit
V
V
V
mA
mW
C
C
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*VBE(ON)
hFE
fT
Cob
Min.
60
50
7
-
-
-
-
-
-
-
180
-
-
Typ.
-
-
-
-
-
0.1
0.2
0.8
0.9
0.64
-
180
2
Max.
-
-
-
100
100
0.3
0.5
1.1
1.2
0.7
560
-
3.5
Unit
V
V
V
nA
nA
V
V
V
V
V
-
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=60V
VEB=7V
IC=50mA, IB=5mA
IC=100mA, IB=10mA
IC=50mA, IB=5mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=30MHz
VCB=12V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Marking Code and Classification of hFE
Rank
hFE Range
Marking
R
180-390
BR
S
270-560
BS
BTC5658Y3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistor BTC56 58Y3 Spec. No. : C204Y3 Issued Date : 2011.11.03 Revised Date : 2019.02.20 Pa ge No. : 1/7 Description  The BTC56 58Y3 is designed for use in driver stag e of AF amplifier and low speed switchi ng.  Complementary to BTA2029Y3.  Pb-free lead plating and halogen-free package. Symbol BTC5658Y3 Outline SO T-723 C B:Base C:Collector E:Emi tter BE Ordering Information Device B TC5658Y3-X-T5-G Package SOT-723 (Pb-fr ee lead plating and halogen-free packag e) Shipping 8000 pcs / tape & reel En vironment friendly grade : S for RoHS c ompliant products, G for RoHS compliant and green compound products Packing sp ec, T5 : 8000 pcs / tape & reel, 7” r eel Product rank, zero for no rank prod ucts Product name BTC5658Y3 CYStek Pr oduct Specification CYStech Electronic s Corp. Spec. No. : C204Y3 Issued Date : 2011.11.03 Revised Date : 2019.02.20 Page No. : 2/7 Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base.
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