BTD142F3

CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD142F3 Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date :2011.10.03 Page No. : 1/7 Description The BTD142F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: High BVCEO Low VCE(SAT) High current gain Monolithic construction with built-in base-emitter shunt resistors Pb-free lead plating package Equivalent Circuit BTD142F3 B R1≈4k R2≈60 C B：Base C：Collector E：Emitter E Outline TO-263 BCE BTD142F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date :2011.10.03 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=300μs Symbol VCBO VCEO VEBO IC ICM Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj Tstg Limits 250 250 10 10 15 (Note 1) 2 60 62.5 2.08 150 -55~+150 Unit V V V A W °C/W °C/W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICEO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 *VBE(sat) *VBE(on) *hFE Min. 250 250 3000 Typ. - Max. 100 100 2 1.4 1.3 1.0 1.2 2.0 1.8 - Unit Test Conditions V IC=100μA, IE=0 V IC=1mA, IB=0 μA VCE=250V, IE=0 μA VCB=250V, IE=0 mA VEB=5V, IC=0 V I...