BTD142F3 Transistor Datasheet

BTD142F3 Datasheet, PDF, Equivalent


Part Number

BTD142F3

Description

NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTD142F3 Datasheet


BTD142F3
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD142F3
Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :2011.10.03
Page No. : 1/7
Description
The BTD142F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
High BVCEO
Low VCE(SAT)
High current gain
Monolithic construction with built-in base-emitter shunt resistors
Pb-free lead plating package
Equivalent Circuit
BTD142F3
B
R14k R260
C
BBase
CCollector
EEmitter
E
Outline
TO-263
BCE
BTD142F3
CYStek Product Specification

BTD142F3
CYStech Electronics Corp.
Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :2011.10.03
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=300μs
Symbol
VCBO
VCEO
VEBO
IC
ICM
Pd(TA=25)
Pd(TC=25)
RθJA
RθJC
Tj
Tstg
Limits
250
250
10
10
15 (Note 1)
2
60
62.5
2.08
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VBE(sat)
*VBE(on)
*hFE
Min.
250
250
-
-
-
-
-
-
-
-
-
3000
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
100
100
2
1.4
1.3
1.0
1.2
2.0
1.8
-
Unit Test Conditions
V IC=100μA, IE=0
V IC=1mA, IB=0
μA VCE=250V, IE=0
μA VCB=250V, IE=0
mA VEB=5V, IC=0
V IC=10A, IB=250mA
V IC=7A, IB=50mA
V IC=4A, IB=5mA
V IC=6A, IB=5mA
V IC=8A, IB=15mA
V VCE=4V, IC=8A
- VCE=4V, IC=5A
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTD142F3
Package
TO-263
(Pb-free lead plating package)
Shipping
800 pcs / Tape & Reel
Marking
D142
BTD142F3
CYStek Product Specification


Features CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD142F3 Spec. No. : C658F3 Issued Date : 2005.08.23 Revise d Date :2011.10.03 Page No. : 1/7 Desc ription The BTD142F3 is a NPN Darlingto n transistor, designed for general purp ose amplifier and low speed switching a pplication. Features: •High BVCEO • Low VCE(SAT) •High current gain •Mo nolithic construction with built-in bas e-emitter shunt resistors •Pb-free le ad plating package Equivalent Circuit BTD142F3 B R1≈4k R2≈60 C B:Base C:Collector E:Emitter E Outline TO-263 BCE BTD142F3 CYStek Product Specification CYStech Electronics Corp . Spec. No. : C658F3 Issued Date : 200 5.08.23 Revised Date :2011.10.03 Page N o. : 2/7 Absolute Maximum Ratings (Ta= 25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collecto r Current(Pulse) Power Dissipation Ther mal Resistance, Junction to Ambient The rmal Resistance, Junction to Case Junction Temperature Storage Temperature Note : *1.
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