BTD1304N3 Transistor Datasheet

BTD1304N3 Datasheet, PDF, Equivalent


Part Number

BTD1304N3

Description

NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download BTD1304N3 Datasheet


BTD1304N3
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
AUDIO MUTING APPLICATION
BTD1304N3
BVCEO
IC
RCE(SAT)
Spec. No. : C857N3
Issued Date : 2011.03.31
Revised Date : 2011.04.01
Page No. : 1/8
20V
500mA
0.3Ω(typ)
Features
High Emitter-Base voltage, VEBO=12V(min).
High reverse hFE, reverse hFE=20(min.) @VCE=2V, IC=4mA.
Low On-resistance, Ron=0.6Ω(max)@IB=1mA.
Pb-free and halogen-free package.
Symbol
BTD1304N3
Outline
SOT-23
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
RθJA
Tj
Tstg
BTD1304N3
Limit
50
20
12
500
50
225
556
150
-55~+150
Unit
V
V
V
mA
mA
mW
°C/W
°C
°C
CYStek Product Specification

BTD1304N3
CYStech Electronics Corp.
Spec. No. : C857N3
Issued Date : 2011.03.31
Revised Date : 2011.04.01
Page No. : 2/8
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE1(FOR)
*hFE2(FOR)
*hFE 3(REV)
fT
Cob
Ron
Min.
50
20
12
-
-
-
-
-
-
200
400
20
-
-
-
Typ.
-
-
-
-
-
34
0.15
0.3
0.67
-
-
-
250
10
-
Max.
-
-
-
100
100
100
0.3
0.6
1
800
-
-
-
-
0.6
Unit
V
V
V
nA
nA
mV
V
Ω
V
-
-
-
MHz
pF
Ω
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IE=10μA, IC=0
VCB=40V, IE=0
VEB=12V, IC=0
IC=100mA, IB=10mA
IC=500mA, IB=20mA
IC=500mA, IB=20mA
IC=100mA, IB=10mA
VCE=2V, IC=4mA
VCE=3V, IC=100mA
VCE=2V, IC=4mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
Vin=0.3V, IB=1mA, f=1KHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
BTD1304N3
Package
SOT-23
(Pb-free and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Marking
MAX
BTD1304N3
CYStek Product Specification


Features CYStech Electronics Corp. NPN Epitaxial Planar Transistor AUDIO MUTING APPLICA TION BTD1304N3 BVCEO IC RCE(SAT) Spec . No. : C857N3 Issued Date : 2011.03.31 Revised Date : 2011.04.01 Page No. : 1 /8 20V 500mA 0.3Ω(typ) Features • H igh Emitter-Base voltage, VEBO=12V(min) . • High reverse hFE, reverse hFE=20( min.) @VCE=2V, IC=4mA. • Low On-resis tance, Ron=0.6Ω(max)@IB=1mA. • Pb-fr ee and halogen-free package. Symbol BT D1304N3 Outline SOT-23 B:Base C: Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collecto r-Base Voltage Collector-Emitter Voltag e Emitter-Base Voltage Collector Curren t Base Current Power Dissipation Therma l Resistance, Junction to Ambient Junct ion Temperature Storage Temperature Sy mbol VCBO VCEO VEBO IC IB PD RθJA Tj T stg BTD1304N3 Limit 50 20 12 500 50 2 25 556 150 -55~+150 Unit V V V mA mA m W °C/W °C °C CYStek Product Specifi cation CYStech Electronics Corp. Spec . No. : C857N3 Issued Date : 2011.03.31 Revised Date : 2011.04.01 Page No. : 2/8 Ch.
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