BTD1616AA3 Transistor Datasheet

BTD1616AA3 Datasheet, PDF, Equivalent


Part Number

BTD1616AA3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTD1616AA3 Datasheet


BTD1616AA3
CYStech Electronics Corp.
Spec. No. : C602A3
Issued Date : 2009.05.14
Revised Date :
Page No. : 1/7
General Purpose NPN Epitaxial Planar Transistor
BTD1616AA3
BVCEO
IC
RCESAT(max)
60V
1A
300mΩ
Features
High breakdown voltage, BVCEO60V
Large continuous collector current capability
Low collector saturation voltage
Pb-free and Halogen-free package
Symbol
BTD1616AA3
Outline
TO-92
BBase
CCollector
EEmitter
E CB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Note : Pulse test, pulse width300μs, duty cycle2%
BTD1616AA3
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
RθJA
Tj ; Tstg
Limits
120
60
7
1
2 (Note)
0.2
750
167
-55~+150
Unit
V
V
V
A
A
A
mW
°C/W
°C
CYStek Product Specification

BTD1616AA3
CYStech Electronics Corp.
Spec. No. : C602A3
Issued Date : 2009.05.14
Revised Date :
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
ton
tstg
tf
Min.
120
60
7
-
-
-
-
-
600
200
120
100
-
-
-
-
Typ.
-
-
-
-
-
150
-
0.9
-
-
-
-
13
40
500
120
Max.
-
-
-
100
100
300
350
1.2
700
400
-
-
18
-
-
-
Unit
V
V
V
nA
nA
mV
mV
V
mV
-
-
MHz
pF
ns
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=120V
VEB=7V
IC=1A, IB=50mA
IC=1A, IB=20mA
IC=1A, IB=50mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
VCE=2V, IC=1A
VCE=2V, IC=100mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
VCC=30V, IC=1A, IB1=-IB2=33mA,
RL=30Ω
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Ordering Information
Device
BTD1616AA3
BTD1616AA3
Package
TO-92
( Pb-free and Halogen-free package)
TO-92
( Pb-free and Halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs / Bag, 10 Bags/Box
Marking
D1616A
D1616A
BTD1616AA3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 602A3 Issued Date : 2009.05.14 Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTD161 6AA3 BVCEO IC RCESAT(max) 60V 1A 30 0mΩ Features • High breakdown volta ge, BVCEO≥ 60V • Large continuous c ollector current capability • Low col lector saturation voltage • Pb-free a nd Halogen-free package Symbol BTD1616 AA3 Outline TO-92 B:Base C:Colle ctor E:Emitter E CB Absolute Maximu m Ratings (Ta=25°C) Parameter Collecto r-Base Voltage Collector-Emitter Voltag e Emitter-Base Voltage Collector Curren t (DC) Collector Current (pulse) Base C urrent Power Dissipation Thermal Resist ance, Junction to Ambient Operating Jun ction and Storage Temperature Range Not e : Pulse test, pulse width≤300μs, d uty cycle≤2% BTD1616AA3 Symbol VCBO VCEO VEBO IC ICP IB PD RθJA Tj ; Tstg Limits 120 60 7 1 2 (Note) 0.2 750 167 -55~+150 Unit V V V A A A mW °C/W ° C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C602A3 Issued Dat.
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