BTD1616AM3

CYStech Electronics Corp. Spec. No. : C602M3 Issued Date : 2009.04.01 Revised Date :2014.03.28 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTD1616AM3 BVCEO IC VCESAT(max) 60V 3A 150mV Features High breakdown voltage, BVCEO≥ 60V Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and halogen-free package Symbol BTD1616AM3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Ordering Information Device BTD1616AM3-0-T2-G Package Shipping SOT-89 (Pb-free lead plating and halogen-free package) 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTD1616AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C602M3 Issued Date : 2009.04.01 Revised Date :2014.03.28 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current Power Dissipation Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IB Pd Tj ; Tstg Limits 120 60 7 3 5 0.3 0.6 1.5 (Note 1) 2.1 (Note 2) -55~+150 Unit V V V A A A W W W °C Note : 1. When mounted on 25mm×25mm×1.6 mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air condition 2 . When mounted on 50m...