BTD1616AM3 Transistor Datasheet

BTD1616AM3 Datasheet, PDF, Equivalent


Part Number

BTD1616AM3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTD1616AM3 Datasheet


BTD1616AM3
CYStech Electronics Corp.
Spec. No. : C602M3
Issued Date : 2009.04.01
Revised Date :2014.03.28
Page No. : 1/7
General Purpose NPN Epitaxial Planar Transistor
BTD1616AM3
BVCEO
IC
VCESAT(max)
60V
3A
150mV
Features
High breakdown voltage, BVCEO60V
Large continuous collector current capability
Low collector saturation voltage
Pb-free lead plating and halogen-free package
Symbol
BTD1616AM3
Outline
SOT-89
BBase
CCollector
EEmitter
BCE
Ordering Information
Device
BTD1616AM3-0-T2-G
Package
Shipping
SOT-89
(Pb-free lead plating and halogen-free package)
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTD1616AM3
CYStek Product Specification

BTD1616AM3
CYStech Electronics Corp.
Spec. No. : C602M3
Issued Date : 2009.04.01
Revised Date :2014.03.28
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj ; Tstg
Limits
120
60
7
3
5
0.3
0.6
1.5 (Note 1)
2.1 (Note 2)
-55~+150
Unit
V
V
V
A
A
A
W
W
W
°C
Note : 1. When mounted on 25mm×25mm×1.6 mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air condition
2 . When mounted on 50mm×50mm×1.6 mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air condition
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
ton
tstg
tf
Min.
120
60
7
-
-
-
-
-
600
200
120
100
-
-
-
-
Typ.
-
-
-
-
-
98
131
-
-
-
-
-
11
40
500
120
Max.
-
-
-
100
100
150
200
1
700
400
-
-
18
-
-
-
Unit
V
V
V
nA
nA
mV
mV
V
mV
-
-
MHz
pF
ns
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=120V
VEB=7V
IC=1A, IB=50mA
IC=1A, IB=20mA
IC=1A, IB=50mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
VCE=2V, IC=1A
VCE=2V, IC=100mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
VCC=30V, IC=1A, IB1=-IB2=33mA,
RL=30Ω
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTD1616AM3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 602M3 Issued Date : 2009.04.01 Revised Date :2014.03.28 Page No. : 1/7 Genera l Purpose NPN Epitaxial Planar Transist or BTD1616AM3 BVCEO IC VCESAT(max) 60V 3A 150mV Features • High breakd own voltage, BVCEO≥ 60V • Large con tinuous collector current capability Low collector saturation voltage • Pb-free lead plating and halogen-free p ackage Symbol BTD1616AM3 Outline SOT -89 B:Base C:Collector E:Emitter BCE Ordering Information Device BTD 1616AM3-0-T2-G Package Shipping SOT- 89 (Pb-free lead plating and halogen-fr ee package) 1000 pcs / Tape & Reel En vironment friendly grade : S for RoHS c ompliant products, G for RoHS compliant and green compound products Packing sp ec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank product s Product name BTD1616AM3 CYStek Prod uct Specification CYStech Electronics Corp. Spec. No. : C602M3 Issued Date : 2009.04.01 Revised Date :2014.03.28 Page No. : 2/7 Absolute Maximum Ratings (Ta.
Keywords BTD1616AM3, datasheet, pdf, CYStech, General, Purpose, NPN, Epitaxial, Planar, Transistor, TD1616AM3, D1616AM3, 1616AM3, BTD1616AM, BTD1616A, BTD1616, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)