BTD1616AN3 Transistor Datasheet

BTD1616AN3 Datasheet, PDF, Equivalent


Part Number

BTD1616AN3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTD1616AN3 Datasheet


BTD1616AN3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1616AN3
BVCEO
IC
Spec. No. : C602N3
Issued Date : 2017.11.06
Revised Date : 2018.02.07
Page No. : 1/7
60V
3A
Features
High breakdown voltage, BVCEO60V
Large continuous collector current capability
Low collector saturation voltage
Pb-free lead plating and halogen-free package
Symbol
BTD1616AN3
Outline
C
SOT-23
BBase
CCollector
EEmitter
E
B
Ordering Information
Device
BTD1616AN3-0-T1-G
Package
Shipping
SOT-23
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 :3000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTD1616AN3
CYStek Product Specification

BTD1616AN3
CYStech Electronics Corp.
Spec. No. : C602N3
Issued Date : 2017.11.06
Revised Date : 2018.02.07
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
RθJA
Tj ; Tstg
Limits
120
60
7
3
5
0.5
310 (Note 1)
500 (Note 2)
660 (Note 3)
403 (Note 1)
250 (Note 2)
190 (Note 3)
-55~+150
Unit
V
A
mW
°C/W
°C
Note : 1. Device mounted on FR-4 PCB with minimum pad.
2. Device mounted on FR-4 PCB with area of 4.5”×5”, mounting pad 0.02 in ² of 2 oz. copper.
3. Device mounted on an FR-4 PCB, single sided copper, tin plated, mounting pad for collector 1cm².
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
Cob
ton
tstg
tf
Min.
120
60
7
-
-
-
-
-
-
-
-
-
150
180
100
50
100
-
-
-
-
Typ.
-
-
-
-
-
98
131
90
150
-
-
-
-
-
-
-
-
11
40
500
120
Max.
-
-
-
100
100
150
200
250
300
1
1.2
1
-
390
-
-
-
18
-
-
-
Unit
V
V
V
nA
nA
mV
mV
mV
mV
V
V
V
-
-
-
-
MHz
pF
ns
Test Conditions
IC=100μA
IC=1mA
IE=50μA
VCB=120V
VEB=7V
IC=1A, IB=50mA
IC=1A, IB=20mA
IC=1A, IB=100mA
IC=2A, IB=200mA
IC=1A, IB=50mA
IC=1A, IB=100mA
VCE=2V, IC=1A
VCE=2V, IC=100mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=2A
VCE=2V, IC=100mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
VCC=30V, IC=1A, IB1=-IB2=33mA,
RL=30Ω
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTD1616AN3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpo se NPN Epitaxial Planar Transistor BTD 1616AN3 BVCEO IC Spec. No. : C602N3 Issued Date : 2017.11.06 Revised Date : 2018.02.07 Page No. : 1/7 60V 3A Feat ures • High breakdown voltage, BVCEO 60V • Large continuous collector c urrent capability • Low collector sat uration voltage • Pb-free lead platin g and halogen-free package Symbol BTD16 16AN3 Outline C SOT-23 B:Base C: Collector E:Emitter E B Ordering In formation Device BTD1616AN3-0-T1-G Pa ckage Shipping SOT-23 (Pb-free lead p lating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compoun d products Packing spec, T1 :3000 pcs/t ape & reel, 7” reel Product rank, zer o for no rank products Product name BT D1616AN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C602N3 Issued Date : 2017.11.06 Revise d Date : 2018.02.07 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter .
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