CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1616AN3
BVCEO
IC
Spec. No. : C602N3 Is...
CYStech Electronics Corp.
General Purpose
NPN Epitaxial Planar
Transistor
BTD1616AN3
BVCEO
IC
Spec. No. : C602N3 Issued Date : 2017.11.06 Revised Date : 2018.02.07 Page No. : 1/7
60V 3A
Features
High breakdown voltage, BVCEO≥ 60V Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and halogen-free package
Symbol
BTD1616AN3
Outline
C
SOT-23
B：Base C：Collector E：Emitter
E B
Ordering Information
Device BTD1616AN3-0-T1-G
Package
Shipping
SOT-23 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 :3000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products Product name
BTD1616AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C602N3 Issued Date : 2017.11.06 Revised Date : 2018.02.07 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current
Power Dissipation
Symbol VCBO VCEO VEBO IC ICP IB
PD
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
RθJA Tj ; Tstg
Limits
120 60 7 3 5 0.5 310 (Note 1)
500 (Note 2)
660 (Note 3)
403 (Note 1)
250 (Note 2)
190 (Note 3) -55~+150
Unit V A
mW
°C/W °C
Note : 1. Device mounted on FR-4 PCB with minimum pad. 2. Device mounted o...
