BTD1768M3 Transistor Datasheet

BTD1768M3 Datasheet, PDF, Equivalent


Part Number

BTD1768M3

Description

NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTD1768M3 Datasheet


BTD1768M3
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD1768M3
Spec. No. : C310M3
Issued Date : 2007.01.10
Revised Date : 2018.05.07
Page No. : 1/6
Features
High VCEO, VCEO=80V
High IC, IC(DC)=1A
Low VCE(sat)
Good current gain linearity
Complementary to BTB1198M3
Pb-free lead plating and halogen-free package
Symbol
BTD1768M3
Outline
SOT-89
BBase
CCollector
EEmitter
BCE
Ordering Information
Device
BTD1768M3-X-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 :1000 pcs/tape & reel
Product rank, zero for no rank products
Product name
BTD1768M3
CYStek Product Specification

BTD1768M3
CYStech Electronics Corp.
Spec. No. : C310M3
Issued Date : 2007.01.10
Revised Date : 2018.05.07
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Thermal Resistance, Junction to Ambient
RθJA
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Single Pulse Pw350μs, Duty2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm
3. When mounted on ceramic with area measuring 40×40×1 mm
Limit
100
80
5
1
2 (Note 1)
0.6
1 (Note 2)
2 (Note 3)
208
125 (Note 2)
62.5 (Note 3)
150
-55~+150
Unit
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
100
80
5
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
100
20
Max.
-
-
-
1
1
0.3
390
-
-
Unit
V
V
V
μA
μA
V
-
MHz
pF
Test Conditions
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=80V. IE=0
VEB=4V,IC=0
IC=500mA, IB=20mA
VCE=3V, IC=100mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
Classification Of hFE
Rank
Range
Q
120~270
R
180~390
BTD1768M3
CYStek Product Specification


Features CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD1768M3 Spec. No. : C310M3 Issued Date : 2007.01.10 Revis ed Date : 2018.05.07 Page No. : 1/6 Fe atures • High VCEO, VCEO=80V • High IC, IC(DC)=1A • Low VCE(sat) • Goo d current gain linearity • Complement ary to BTB1198M3 • Pb-free lead plati ng and halogen-free package Symbol BTD1 768M3 Outline SOT-89 B:Base C:Co llector E:Emitter BCE Ordering Info rmation Device BTD1768M3-X-T2-G Packa ge SOT-89 (Pb-free lead plating and hal ogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grad e : S for RoHS compliant products, G fo r RoHS compliant and green compound pro ducts Packing spec, T2 :1000 pcs/tape & reel Product rank, zero for no rank pr oducts Product name BTD1768M3 CYStek Product Specification CYStech Electron ics Corp. Spec. No. : C310M3 Issued Da te : 2007.01.10 Revised Date : 2018.05. 07 Page No. : 2/6 Absolute Maximum Rat ings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitte.
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