BTD1768M3

CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD1768M3 Spec. No. : C310M3 Issued Date : 2007.01.10 Revised Date : 2018.05.07 Page No. : 1/6 Features High VCEO, VCEO=80V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1198M3 Pb-free lead plating and halogen-free package Symbol BTD1768M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Ordering Information Device BTD1768M3-X-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel Product rank, zero for no rank products Product name BTD1768M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C310M3 Issued Date : 2007.01.10 Revised Date : 2018.05.07 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Thermal Resistance, Junction to Ambient RθJA Junction Temperature Tj Storage Temperature Tstg Note : 1. Single Pulse Pw≦350μs, Duty≦2%. 2. When mounted on FR-4 PCB with area measuring 10×10×1 mm 3. When mounted on ceramic with area measuring 40×40×1 mm Limit 100 80 5 1 2 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V A A W W W °C/...