BTD1768S3 Transistor Datasheet

BTD1768S3 Datasheet, PDF, Equivalent


Part Number

BTD1768S3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTD1768S3 Datasheet


BTD1768S3
CYStech Electronics Corp.
Spec. No. : C304S3
Issued Date : 2009.11.19
Revised Date : 2017.06.09
Page No. : 1/6
General Purpose NPN Epitaxial Planar Transistor
BTD1768S3
BVCEO
IC
80V
1A
Description
The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
Low collector saturation voltage
High breakdown voltage, VCEO=80V (min.)
High collector current, IC(max)=1A (DC)
Pb-free package
Symbol
BTD1768S3
Outline
SOT-323
BBase
CCollector
EEmitter
Ordering Information
Device
BTD1768S3-X-T1-G
Package
SOT-323 (Pb-free and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTD1768S3
CYStek Product Specification

BTD1768S3
CYStech Electronics Corp.
Spec. No. : C304S3
Issued Date : 2009.11.19
Revised Date : 2017.06.09
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
Note : Pulse test, PW 10ms, Duty 2%.
Limits
180
80
7
1
2 (Note)
200
625
-55~+150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT) 1
*VCE(SAT) 2
*VBE(SAT)
*VBE(ON)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
180
80
7
-
-
-
-
-
0.6
180
60
20
-
-
Typ.
-
-
-
-
-
0.15
0.3
0.96
0.66
-
-
-
250
6
Max.
-
-
-
100
100
0.3
0.5
1.2
0.7
560
-
-
-
15
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=180V, IE=0
VEB=7V, IC=0
IC=500mA, IB=20mA
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Classification Of hFE 1
Rank
Range
R
180~390
S
270~560
BTD1768S3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 304S3 Issued Date : 2009.11.19 Revised Date : 2017.06.09 Page No. : 1/6 Gener al Purpose NPN Epitaxial Planar Transis tor BTD1768S3 BVCEO IC 80V 1A Descri ption The BTD1768S3 is designed for use in driver and output stages of AF ampl ifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCE O=80V (min.) • High collector current , IC(max)=1A (DC) • Pb-free package S ymbol BTD1768S3 Outline SOT-323 B:B ase C:Collector E:Emitter Ordering Information Device BTD1768S3-X-T1-G P ackage SOT-323 (Pb-free and halogen-fre e package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S fo r RoHS compliant products, G for RoHS c ompliant and green compound products Pa cking spec, T1 : 3000 pcs / tape & reel , 7” reel Product rank, zero for no r ank products Product name BTD1768S3 C YStek Product Specification CYStech El ectronics Corp. Spec. No. : C304S3 Issued Date : 2009.11.19 Revised Date : 201.
Keywords BTD1768S3, datasheet, pdf, CYStech, General, Purpose, NPN, Epitaxial, Planar, Transistor, TD1768S3, D1768S3, 1768S3, BTD1768S, BTD1768, BTD176, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)