BTD1782N3 Transistor Datasheet

BTD1782N3 Datasheet, PDF, Equivalent


Part Number

BTD1782N3

Description

General Purpose NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 6 Pages
Datasheet
Download BTD1782N3 Datasheet


BTD1782N3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1782N3
Spec. No. : C304N3
Issued Date : 2006.06.12
Revised Date : 2007.12.11
Page No. : 1/6
Description
The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA
High breakdown voltage, VCEO=80V (min.)
Complements to BTB1198N3
Pb-free package
Symbol
BTD1782N3
Outline
SOT-23
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj
Tstg
Note : Pulse test, PW 10ms, Duty 50%.
BTD1782N3
Limits
80
80
5
0.5
200
625
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
CYStek Product Specification

BTD1782N3
CYStech Electronics Corp.
Spec. No. : C304N3
Issued Date : 2006.06.12
Revised Date : 2007.12.11
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*hFE
fT
Cob
Min.
80
80
5
-
-
-
120
-
-
Typ.
-
-
-
-
-
0.15
-
180
7.5
Max.
-
-
-
0.5
0.5
0.5
390
-
-
Unit
V
V
V
μA
μA
V
-
MHz
pF
Test Conditions
IC=50μA
IC=2mA
IE=50μA
VCB=50V, IE=0
VEB=4V, IC=0
IC=500mA, IB=20mA
VCE=3V, IC=100mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Classification Of hFE
Rank
Q
Range
120~270
R
180~390
Ordering Information
Device
BTD1782N3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
AJ
BTD1782N3
CYStek Product Specification


Features CYStech Electronics Corp. General Purpos e NPN Epitaxial Planar Transistor BTD17 82N3 Spec. No. : C304N3 Issued Date : 2006.06.12 Revised Date : 2007.12.11 Pa ge No. : 1/6 Description The BTD1782N3 is designed for use in driver and outp ut stages of AF amplifier and general p urpose application. Features • Low V CE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA /IB=50mA • High breakdown voltage, VC EO=80V (min.) • Complements to BTB119 8N3 • Pb-free package Symbol BTD1782 N3 Outline SOT-23 B:Base C:Collec tor E:Emitter Absolute Maximum Ratin gs (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emit ter-Base Voltage Collector Current (DC) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperatur e Storage Temperature Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%. BTD1 782N3 Limits 80 80 5 0.5 200 625 150 - 55~+150 Unit V V V A mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304N3 Issued Da.
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