BTD1805BT3 Transistor Datasheet

BTD1805BT3 Datasheet, PDF, Equivalent


Part Number

BTD1805BT3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 4 Pages
Datasheet
Download BTD1805BT3 Datasheet


BTD1805BT3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805BT3
Spec. No. : C820T3
Issued Date : 2007.07.09
Revised Date :
Page No. : 1/ 4
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
Very low collector-to-emitter saturation voltage
Fast switching speed
High current gain characteristic
Large current capability
Pb-free package
Applications
CCFL drivers
Voltage regulators
Relay drivers
High efficiency low voltage switching applications
Symbol
BTD1805BT3
Outline
TO-126
BBase
CCollector
EEmitter
BTD1805BT3
BCE
CYStek Product Specification

BTD1805BT3
CYStech Electronics Corp.
Spec. No. : C820T3
Issued Date : 2007.07.09
Revised Date :
Page No. : 2/ 4
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
170
60
8
5
10 (Note 1)
2
1.5
20
83.3
6.25
150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw380μs,Duty2%.
Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
ton
tstg
tf
Min.
170
60
8
-
-
-
-
-
-
-
200
120
40
-
-
-
-
-
Typ.
-
-
-
-
-
-
190
230
-
0.9
-
-
-
150
50
50
1.35
120
Max.
-
-
-
0.1
0.1
50
250
300
400
1
400
-
-
-
-
-
2.5
1000
Unit
V
V
V
μA
μA
mV
mV
mV
mV
V
-
-
-
MHz
pF
ns
μs
ns
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IC=100μA, IC=0
VCB=170V, IE=0
VEB=8V, IC=0
IC=100mA, IB=5mA
IC=2A, IB=50mA
IC=3A, IB=150mA
IC=5A, IB=200mA
IC=2A, IB=100mA
VCE=2V, IC=100mA
VCE=2V, IC=5A
VCE=2V, IC=10A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
VCC=30V, IC=10IB1=-10IB2=1A,
RL=30Ω
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
BTD1805BT3
CYStek Product Specification


Features CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805BT3 Spec. No. : C820T3 Issued Date : 2007 .07.09 Revised Date : Page No. : 1/ 4 Description The device is manufactured in NPN planar technology by using a “ Base Island” layout. The resulting tr ansistor shows exceptional high gain pe rformance coupled with very low saturat ion voltage. Features • Very low coll ector-to-emitter saturation voltage • Fast switching speed • High current gain characteristic • Large current c apability • Pb-free package Applicati ons • CCFL drivers • Voltage regula tors • Relay drivers • High efficie ncy low voltage switching applications Symbol BTD1805BT3 Outline TO-126 B Base C:Collector E:Emitter BTD180 5BT3 BCE CYStek Product Specification CYStech Electronics Corp. Spec. No. : C820T3 Issued Date : 2007.07.09 Revise d Date : Page No. : 2/ 4 Absolute Maxi mum Ratings (Ta=25°C) Parameter Collec tor-Base Voltage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collect.
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