BTD1805F3 Transistor Datasheet

BTD1805F3 Datasheet, PDF, Equivalent


Part Number

BTD1805F3

Description

Low Vcesat NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 10 Pages
Datasheet
Download BTD1805F3 Datasheet


BTD1805F3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805F3
Spec. No. : C820F3
Issued Date : 2011.12.01
Revised Date : 2019.11.26
Page No. : 1/ 10
Description
The device is manufactured in NPN planar technology by using a Base Islandlayout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
Very low collector-to-emitter saturation voltage
Fast switching speed
High current gain characteristic
Large current capability
RoHS compliant package
Applications
CCFL drivers
Voltage regulators
Relay drivers
High efficiency low voltage switching applications
Ordering Information
Device
BTD1805F3-0-T7-X
Package
Shipping
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13reel
Product rank, zero for no rank products
Product name
BTD1805F3
CYStek Product Specification

BTD1805F3
Symbol
CYStech Electronics Corp.
Spec. No. : C820F3
Issued Date : 2011.12.01
Revised Date : 2019.11.26
Page No. : 2/ 10
Outline
BTD1805F3
TO-263
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
100
60
7
7
12 (Note 1)
2
1.65
40
75.8
3.125
150
-55~+150
V
V
V
A
A
W
C/W
C/W
C
C
Note : 1. Single Pulse , Pw380μs,Duty2%.
BTD1805F3
CYStek Product Specification


Features CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805F3 Spec. No. : C820F3 Issued Date : 2011. 12.01 Revised Date : 2019.11.26 Page No . : 1/ 10 Description The device is ma nufactured in NPN planar technology by using a “Base Island” layout. The r esulting transistor shows exceptional h igh gain performance coupled with very low saturation voltage. Features  Ve ry low collector-to-emitter saturation voltage  Fast switching speed  Hi gh current gain characteristic  Larg e current capability  RoHS compliant package Applications  CCFL drivers  Voltage regulators  Relay driver s  High efficiency low voltage switc hing applications Ordering Information Device BTD1805F3-0-T7-X Package Shi pping TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tap e & Reel Environment friendly grade : S for RoHS compliant products, G for Ro HS compliant and green compound product s Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank.
Keywords BTD1805F3, datasheet, pdf, CYStech, Low, Vcesat, NPN, Epitaxial, Planar, Transistor, TD1805F3, D1805F3, 1805F3, BTD1805F, BTD1805, BTD180, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)