FDB8443-F085 MOSFET Datasheet

FDB8443-F085 Datasheet, PDF, Equivalent


Part Number

FDB8443-F085

Description

N-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 7 Pages
Datasheet
Download FDB8443-F085 Datasheet


FDB8443-F085
FDB8443-F085
N-Channel PowerTrench® MOSFET
40V, 80A, 3.0mΩ
Features
„ Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A
„ Typ Qg(10) = 142nC at VGS = 10V
„ Low Miller Charge
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter / Alternator
„ Distributed Power Architecture and VRMs
„ Primary Switch for 12V Systems
©2011 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
FDB8443-F085/D

FDB8443-F085
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 146oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
Pulsed
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
Ratings
40
±20
80
25
See Figure 4
531
188
1.25
-55 to +175
Units
V
V
A
mJ
W
W/oC
oC
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
(Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
0.8
62
43
oC/W
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDB8443
Device
FDB8443-F085
Package
TO-263AB
Reel Size
330mm
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
Tape Width
24mm
Quantity
800 units
Min Typ Max Units
BVDSS
IDSS
IGSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS = 32V,
VGS = 0V
TC = 150oC
VGS = ±20V
40
-
-
-
- -V
-
-
1
250
μA
- ±100 nA
VGS(th) Gate to Source Threshold Voltage
rDS(on) Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 80A, VGS= 10V
ID
TJ
=
=
8107A5o, CVGS=
10V,
2 2.8 4
V
- 2.3 3.0
- 4.2 5.5 mΩ
Ciss
Coss
Crss
RG
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 20V
ID = 35A
Ig = 1mA
- 9310
-
pF
- 800 - pF
- 510 - pF
- 0.9 - Ω
-
142 185
nC
- 17.5 23 nC
- 36 - nC
- 18.8 - nC
- 32
- nC
www.onsemi.com
2


Features FDB8443-F085 N-Channel PowerTrench® MOS FET FDB8443-F085 N-Channel PowerTrench ® MOSFET 40V, 80A, 3.0mΩ Features „ Typ rDS(on) = 2.3mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 142nC at VGS = 10 V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse a nd Repetitive Pulse) „ Qualified to AE C Q101 „ RoHS Compliant Applications „ Automotive Engine Control „ Powertr ain Management „ Solenoid and Motor Dr ivers „ Electronic Steering „ Integra ted Starter / Alternator „ Distributed Power Architecture and VRMs „ Primary Switch for 12V Systems ©2011 Semicon ductor Components Industries, LLC. Sept ember-2017, Rev. 3 Publication Order N umber: FDB8443-F085/D FDB8443-F085 N-C hannel PowerTrench® MOSFET MOSFET Max imum Ratings TC = 25°C unless otherwis e noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Sourc e Voltage Drain Current Continuous (TC < 146oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed EAS Single Pulse Avalanche Energy PD .
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