IX4351NE

INTEGRATED CIRCUITS DIVISION Features Separate 9A peak source and sink outputs Operating Voltage Range: -10V to +25V Internal charge pump regulator for selectable negative gate drive bias Desaturation detection with soft shutdown sink driver TTL and CMOS compatible input Under Voltage lockout (UVLO) Thermal shutdown Open drain FAULT output Applications Driving SiC MOSFETs and IGBTs On-board charger and DC charging station Industrial inverters PFC, AC/DC and DC/DC converters IX4351 Functional Block Diagram IN 6 FAULT 5 Gate and Control Logic VREG 8 VDD 4.6V Regulator SET 9 Charge Pump Control VDD 6.8V 4 DESAT 2 VDD 3 VDD 1 OUTSRC 16 OUTSNK 15 VSS 10 VSS 14 OUTSOFT V SS 13 INSOFT 2.6V VDD 12 CAP 11 GND 7 COM IX4351NE 9A Low Side SiC MOSFET & IGBT Driver Description The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off. Desaturation detection circuitry detects an over current condition of the SiC MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input, IN, is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal...