Fast Recovery High Voltage Silicon Rectifier Diode
HV-T73A 5.0mA 12kV 80nS
Fast Recovery High Voltage Silicon Rectifier Diode
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Description
HV-T73A 5.0mA 12kV 80nS
Fast Recovery High Voltage Silicon Rectifier Diode
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Introduce:
Reference Shape:
HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. Features: Fast recovery. High reliability design. Low current, high voltage. Conform to RoHS and SGS. Epoxy resin molded in vacuumHave anticorrosion in
the surface.
Applications:
HVGT Name:
Unit: (mm)
Air purification, negative ions.
DO-210S
Electrostatic voltage doubling circuit.
Lead Diameter 0.5±0.03
Copier and X-ray.
Other high voltage rectifier circuits.
Mechanical Data:
Case: epoxy resin molding. Terminal: welding axis. Net weight: 0.25 grams (approx).
26.0 (min)
10.0 (max)
Maximum Ratings And Characteristics: (Absolute Maximum Ratings)
26.0 (min)
2.5 (max)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
VRRM
TA=25°C
Non-Repetitive Peak Renerse Voltage
VRSM
TA=25°C
Average Forward Current Maximum
IFAVM
TA=25°C TOIL=55°C
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
Electrical Characteristics: TA=25°C (Unless Otherwise Specified)
Items...
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