ESJC13-12B Diodes Datasheet

ESJC13-12B Datasheet, PDF, Equivalent


Part Number

ESJC13-12B

Description

High Voltage Microwave Oven Rectifiers Diodes

Manufacture

GETE

Total Page 2 Pages
Datasheet
Download ESJC13-12B Datasheet


ESJC13-12B
ESJC13-12B 350mA 12kV --nS
High Voltage Microwave Oven Rectifiers Diodes
-------------------------------------------------------------------------------------------------------------------------
INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. Low VF.
2. High reliability.
3. High Surge proof resistivity.
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-722B
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. High voltage power supply rectifier.
2. High voltage rectifier circuit for microwave
oven.
3. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.90 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
VRRM
TA=25°C
12 kV
Average Forward Current Maximum
IO
TA=60°C
350 mA
Non-repetitive Peak Rorward Current
Non-repetitive Peak Forward Current
IRSM
TA=25°C; Wp=1mS.Rectangular-wave.
One-shot
IFSM
TA=25°C; 50HzSine half-wave peak
value.One-shot.
100
30
mA
A
Junction Temperature
TJ
130 °C
Allowable Operation Case Temperature
Tc
-40~+130
°C
Storage Temperature
ELECTRICAL CHARACTERISTICS:
Items
TSTG
TA=25°C (Unless Otherwise Specified)
Symbols
Condition
-55~+150
°C
Data value Units
Maximum Forward Voltage Drop
VFM
at 25°C; at IO
10 V
Maximum Reverse Current
IR1 at 25°C; at VRRM
IR2 at 100°C; at VRRM
5.0 uA
50 uA
Maximum Reverse Recovery Time
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS
Minimum Avalanche Breakdown Voltase
VZ
IR=100uA
12.5 kV
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-06 1 / 2

ESJC13-12B
ESJC13-12B 350mA 12kV --nS
High Voltage Microwave Oven Rectifiers Diodes
-------------------------------------------------------------------------------------------------------------------------
Forward Current Derating Curves
125
100
Average
Forward
Current
-%
75
50
25
0
0 25
100
50 75 100 125
Temperature()
Non-Repetitive Surge Current
150
175
Peak
Forward
Surge
Current
-%
75
50
25
0
1
Forward Characteristics
10
Cycles (50Hz)
100
Reverse Characteristics
400 1
300
IF
200
mA
100
IR 0.1
uA
0.01
0
03
Tj=100°C
69
VF (V)
12
Tj=25°C
15
0
03
Tj=100°C
69
VR (kV)
12
Tj=25°C
15
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-06 2 / 2


Features ESJC13-12B 350mA 12kV --nS High Voltage Microwave Oven Rectifiers Diodes ----- --------------------------------------- --------------------------------------- -------------------------------------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is mad e of high quality silicon wafer chip a nd high reliability epoxy resin sealin g structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. Low VF. 2. High reliability. 3. High Sur ge proof resistivity. 4. Conform to Ro HS and SGS. SIZE: (Unit:mm) HVGT NAME : DO-722B 5. Epoxy resin molded in vac uumHave anticorrosion in the surface. APPLICATIONS: 1. High voltage power s upply rectifier. 2. High voltage recti fier circuit for microwave oven. 3. O ther. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding a xis. 3. Net weight: 2.90 grams (approx ). MAXIMUM RATINGS AND CHARACTERISTICS : (Absolute Maximum Ratings) Items Symbols Condition Data V.
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