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ESJC13-12B Dataheets PDF



Part Number ESJC13-12B
Manufacturers GETE
Logo GETE
Description High Voltage Microwave Oven Rectifiers Diodes
Datasheet ESJC13-12B DatasheetESJC13-12B Datasheet (PDF)

ESJC13-12B 350mA 12kV --nS High Voltage Microwave Oven Rectifiers Diodes ------------------------------------------------------------------------------------------------------------------------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. Low VF. 2. High reliability. 3. .

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ESJC13-12B 350mA 12kV --nS High Voltage Microwave Oven Rectifiers Diodes ------------------------------------------------------------------------------------------------------------------------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. Low VF. 2. High reliability. 3. High Surge proof resistivity. 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-722B 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. High voltage power supply rectifier. 2. High voltage rectifier circuit for microwave oven. 3. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 2.90 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 12 kV Average Forward Current Maximum IO TA=60°C 350 mA Non-repetitive Peak Rorward Current Non-repetitive Peak Forward Current IRSM TA=25°C; Wp=1mS.Rectangular-wave. One-shot IFSM TA=25°C; 50HzSine half-wave peak value.One-shot. 100 30 mA A Junction Temperature TJ 130 °C Allowable Operation Case Temperature Tc -40~+130 °C Storage Temperature ELECTRICAL CHARACTERISTICS: Items TSTG TA=25°C (Unless Otherwise Specified) Symbols Condition -55~+150 °C Data value Units Maximum Forward Voltage Drop VFM at 25°C; at IO 10 V Maximum Reverse Current IR1 at 25°C; at VRRM IR2 at 100°C; at VRRM 5.0 uA 50 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS Minimum Avalanche Breakdown Voltase VZ IR=100uA 12.5 kV GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-06 1 / 2 ESJC13-12B 350mA 12kV --nS High Voltage Microwave Oven Rectifiers Diodes ------------------------------------------------------------------------------------------------------------------------- Forward Current Derating Curves 125 100 Average Forward Current -% 75 50 25 0 0 25 100 50 75 100 125 Temperature(℃) Non-Repetitive Surge Current 150 175 Peak Forward Surge Current -% 75 50 25 0 1 Forward Characteristics 10 Cycles (50Hz) 100 Reverse Characteristics 400 1 300 IF 200 mA 100 IR 0.1 uA 0.01 0 03 Tj=100°C 69 VF (V) 12 Tj=25°C 15 0 03 Tj=100°C 69 VR (kV) 12 Tj=25°C 15 GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-06 2 / 2 .


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