R5000F Diode Datasheet

R5000F Datasheet, PDF, Equivalent


Part Number

R5000F

Description

High Voltage Fast Recovery Rectifier Diode

Manufacture

GETE

Total Page 3 Pages
Datasheet
Download R5000F Datasheet


R5000F
R5000F
200mA 5.0kV 500nS
High Voltage Fast Recovery Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. Fast switching.
2. High reliability.
3. High current capability.
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-15
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Rectifier for high voltage power supply.
2. High voltage transformer rectifier.
3. Doubler rectifier circuit.
4. Accelerator power supply.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.4 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
Maximum RMS Reverse Voltage
VRRM
VRMS
TA=25°C
TA=25°C
5000
3500
V
V
Maximum DC Blocking Voltage
VR
TA=25°C
5000
V
Average Forward Current Maximum
IO
TOIL=50°C
200 mA
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
30
A
Junction Temperature
TJ
150 °C
Allowable Operation Case Temperature
Tc
-65~+150
°C
Storage Temperature
ELECTRICAL CHARACTERISTICS:
Items
TSTG
TA=25°C (Unless Otherwise Specified)
Symbols
Condition
-65~+150
°C
Data value Units
Maximum Forward Voltage Drop
VFM
at 25°C; at IFAVM
6.5 V
Maximum Reverse Current
IR1 at 25°C; at VRRM
5.0 uA
IR2 at 100°C; at VRRM 100 uA
Maximum Reverse Recovery Time
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 500 nS
Junction Capacitance
CJ at 25°C; VR=4.0V; f=1MHz
30 pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-04 1 / 3

R5000F
R5000F
200mA 5.0kV 500nS
High Voltage Fast Recovery Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
Forward Current Derating Curve
Reverse Recovery Measurement Waveform
Average Forward Current-%
125
TRR
100 IF
75
0
50
IRR
25
0 IR
0 25 50 75 100 125 150 175 Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
Temperature()
IR is typically the rated average forward current maximum
(IFAVM) of the D.U.T
Non-Repetitive Surge Current
100
Peak
Forward
Surge
Current
-%
75
50
25
0
1 10 100
Cycles (60Hz)
Marking
Type
R5000F
Code
R5000F
HVGT
Cathode Mark
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-04 2 / 3


Features R5000F 200mA 5.0kV 500nS High Voltage Fast Recovery Rectifier Diode -------- --------------------------------------- --------------------------------------- --------------------------------------- ------- INTRODUCE: SHAPE DISPLAY: H VGT high voltage silicon rectifier diod es is made of high quality silicon waf er chip and high reliability epoxy res in sealing structure, and through prof essional testing equipment inspection qualified after to customers. FEATURES : 1. Fast switching. 2. High reliabil ity. 3. High current capability. 4. C onform to RoHS and SGS. SIZE: (Unit:mm ) HVGT NAME: DO-15 5. Epoxy resin mol ded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. Rectifier for high voltage power supply. 2. High voltage transformer rectifier. 3. Dou bler rectifier circuit. 4. Accelerator power supply. MECHANICAL DATA: 1. Ca se: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 0.4 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maxi.
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