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R5000F

GETE

High Voltage Fast Recovery Rectifier Diode

R5000F 200mA 5.0kV 500nS High Voltage Fast Recovery Rectifier Diode -------------------------------------------------...


GETE

R5000F

File Download Download R5000F Datasheet


Description
R5000F 200mA 5.0kV 500nS High Voltage Fast Recovery Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. Fast switching. 2. High reliability. 3. High current capability. 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-15 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. Rectifier for high voltage power supply. 2. High voltage transformer rectifier. 3. Doubler rectifier circuit. 4. Accelerator power supply. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 0.4 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage Maximum RMS Reverse Voltage VRRM VRMS TA=25°C TA=25°C 5000 3500 V V Maximum DC Blocking Voltage VR TA=25°C 5000 V Average Forward Current Maximum IO TOIL=50°C 200 mA Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS 30 A Junction Temperature TJ 150 °C Allowable Operation Case Temperature Tc -65~+150 °C Storage Temperature ELECTRICAL CHARACTERISTICS: Item...




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