High Voltage Fast Recovery Rectifier Diode
R5000F
200mA 5.0kV 500nS
High Voltage Fast Recovery Rectifier Diode
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Description
R5000F
200mA 5.0kV 500nS
High Voltage Fast Recovery Rectifier Diode
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INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. Fast switching.
2. High reliability.
3. High current capability.
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-15
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Rectifier for high voltage power supply.
2. High voltage transformer rectifier.
3. Doubler rectifier circuit.
4. Accelerator power supply.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.4 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage Maximum RMS Reverse Voltage
VRRM VRMS
TA=25°C TA=25°C
5000 3500
V V
Maximum DC Blocking Voltage
VR
TA=25°C
5000
V
Average Forward Current Maximum
IO
TOIL=50°C
200 mA
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
30
A
Junction Temperature
TJ
150 °C
Allowable Operation Case Temperature
Tc
-65~+150
°C
Storage Temperature ELECTRICAL CHARACTERISTICS:
Item...
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