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GT02F16

HVGT

High Voltage Silicon Rectifier Diode

GT02F16 20mA 16kV 150nS High Voltage Silicon Rectifier Diode ---------------------------------------------------------...


HVGT

GT02F16

File Download Download GT02F16 Datasheet


Description
GT02F16 20mA 16kV 150nS High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. Fast switching. 2. High reliability. 3. High current capability. 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-312 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. Rectifier for high voltage power supply. 2. General purpose high voltage rectifier. . 3. Rectification for X-ray generator high voltage power supply. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 0.34 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage Non-Repetitive Peak Renerse Voltage VRRM VRSM TA=25°C TA=25°C 16 kV 16 kV Average Forward Current Maximum IFAVM TA=25°C TOIL=55°C 20 mA -- mA Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS 3.0 A Junction Temperature TJ 150 °C Allowable Operation Case Temperature Tc -40~+150 °C Storage Temperature ELECTRICAL CHARACTERISTICS: Items TSTG TA=25°C (Unless...




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