R4000 Diode Datasheet

R4000 Datasheet, PDF, Equivalent


Part Number

R4000

Description

High Voltage Silicon Rectifier Diode

Manufacture

HVGT

Total Page 3 Pages
Datasheet
Download R4000 Datasheet


R4000
R4000
200mA 4.0kV
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. Low leakage.
2. Low forward voltage drop.
3. High current capability.
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-15
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Rectifier for high voltage power supply.
2. High voltage transformer rectifier.
3. Doubler rectifier circuit.
4. Accelerator power supply.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.4 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
Maximum RMS Reverse Voltage
VRRM
VRMS
TA=25°C
TA=25°C
4000
2800
V
V
Maximum DC Blocking Voltage
VR
TA=25°C
4000
V
Average Forward Current Maximum
IO
TOIL=50°C
200 mA
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
30
A
Junction Temperature
TJ
150 °C
Allowable Operation Case Temperature
Tc
-65~+150
°C
Storage Temperature
ELECTRICAL CHARACTERISTICS:
Items
TSTG
TA=25°C (Unless Otherwise Specified)
Symbols
Condition
-65~+150
°C
Data value Units
Maximum Forward Voltage Drop
VFM
at 25°C; at IFAVM
5.0 V
Maximum Reverse Current
IR1 at 25°C; at VRRM
IR2 at 100°C; at VRRM
5.0 uA
40 uA
Maximum Reverse Recovery Time
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS
Junction Capacitance
CJ at 25°C; VR=4.0V; f=1MHz
30 pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-04 1 / 3

R4000
R4000
200mA 4.0kV
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
Fig 1
Forward Current Derating Curve
Fig 2
Non-Repetitive Surge Current
Marking
Cycles (60Hz)
Type
R4000
Code
R4000
HVGT
Cathode Mark
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-04 2 / 3


Features R4000 200mA 4.0kV High Voltage Silicon Rectifier Diode --------------------- --------------------------------------- --------------------------------------- -------------------------- ------- INT RODUCE: SHAPE DISPLAY: HVGT high volt age silicon rectifier diodes is made o f high quality silicon wafer chip and h igh reliability epoxy resin sealing st ructure, and through professional test ing equipment inspection qualified aft er to customers. FEATURES: 1. Low lea kage. 2. Low forward voltage drop. 3. High current capability. 4. Conform t o RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-15 5. Epoxy resin molded in v acuumHave anticorrosion in the surface . APPLICATIONS: 1. Rectifier for high voltage power supply. 2. High voltage transformer rectifier. 3. Doubler rec tifier circuit. 4. Accelerator power s upply. MECHANICAL DATA: 1. Case: epox y resin molding. 2. Terminal: welding axis. 3. Net weight: 0.4 grams (approx ). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Rati.
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