2CL2J Diode Datasheet

2CL2J Datasheet, PDF, Equivalent


Part Number

2CL2J

Description

High Voltage Silicon Rectifier Diode

Manufacture

HVGT

Total Page 2 Pages
Datasheet
Download 2CL2J Datasheet


2CL2J
2CL2J
100mA 15kV --nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. High overload surge capability.
2. Avalanche Characteristic.
3. Medium Current, Low Forward Voltage
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-415
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Rectifier for high voltage power supply.
2. General purpose high voltage rectifier. .
3. Rectification for X-ray generator high voltage
power supply.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.65 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
Non-Repetitive Peak Renerse Voltage
VRRM
VRSM
TA=25°C
TA=25°C
15 kV
-- kV
Average Forward Current Maximum
IFAVM
TA=40°C
TOIL=55°C
100 mA
220 mA
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
20
A
Junction Temperature
TJ
125 °C
Allowable Operation Case Temperature
Tc
-40~+125
°C
Storage Temperature
ELECTRICAL CHARACTERISTICS:
Items
TSTG
TA=25°C (Unless Otherwise Specified)
Symbols
Condition
-40~+150
°C
Data value Units
Maximum Forward Voltage Drop
VFM
at 25°C; at 100mA
16 V
Maximum Reverse Current
IR1 at 25°C; at VRRM
IR2 at 100°C; at VRRM
2.0 uA
40 uA
Maximum Reverse Recovery Time
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS
Junction Capacitance
CJ at 25°C; VR=0V; f=1MHz
-- pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-05 1 / 2

2CL2J
2CL2J
100mA 15kV --nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
Forward Current Derating Curves
125
100
Average
Forward
Current
-%
75
50
25
0
0 25
50 75 100 125 150
Temperature()
175
Non-Repetitive Surge Current
100
Peak
Forward
Surge
Current
-%
75
50
25
0
1
Marking
Type
2CL2J
10
Cycles (60Hz)
Code
2CL2J
HVGT
100
Cathode Mark
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-05 2 / 2


Features 2CL2J 100mA 15kV --nS High Voltage Sil icon Rectifier Diode ----------------- --------------------------------------- --------------------------------------- ------------------------------ ------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is mad e of high quality silicon wafer chip a nd high reliability epoxy resin sealin g structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. Hig h overload surge capability. 2. Avalan che Characteristic. 3. Medium Current, Low Forward Voltage 4. Conform to RoH S and SGS. SIZE: (Unit:mm) HVGT NAME: DO-415 5. Epoxy resin molded in vacuu mHave anticorrosion in the surface. A PPLICATIONS: 1. Rectifier for high vol tage power supply. 2. General purpose high voltage rectifier. . 3. Rectifica tion for X-ray generator high voltage power supply. MECHANICAL DATA: 1. Cas e: epoxy resin molding. 2. Terminal: w elding axis. 3. Net weight: 0.65 grams (approx). MAXIMUM RATI.
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