HV55G15

HV55G15 55mA 15kV 100nS--High voltage silicon rectifier diode HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. SHAPE DISPLAY: FEATURES: 1. High reliability design. 2. High voltage design. 3. High frequency . 4. Conform to RoHS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. SIZE: (Unit:mm) HVGT NAME: DO-312 APPLICATIONS: 1. High voltage multiplier circuit 2. Electrostatic generator circuit . 3. General purpose high voltage rectifier. 4. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 0.45 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Repetitive Peak Renerse Voltage Average Output Current Suege Current Junction Temperature Allowable Operation Case Temperature Storage Temperature VRRM IF IFSM TJ Tc TSTG Ta=25°C; Ta=55°C;Resistive Load Ta=25°C; 1/2 Sine(60Hz) Data Value Units 15 55 3.0 -40~+125 125 -40~+125 kV mA A °C °C °C ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified) Items Symbols Condition Maximum Forward Voltage Drop Maximum Reverse Current Maximum Reverse Recovery Time Junction Capacitance VF at 25°C; at IF(AV) IR1 at 25°C; at VRRM IR2 at 100°C; atVRRM TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR CJ at 25°C; VR=0V; f=1MHz Data value Units...