BR8F Diodes Datasheet

BR8F Datasheet, PDF, Equivalent


Part Number

BR8F

Description

High Voltage Medium and High Current Diodes

Manufacture

HVGT

Total Page 2 Pages
Datasheet
Download BR8F Datasheet


BR8F
BR8F
400mA 8.0kV 100nS
High Voltage Medium and High Current Diodes
----------------------------------------------------------------------------------------------------------------------------- -------
INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. High overload surge capability.
2. Avalanche Characteristic.
3. Medium Current, Low Forward Voltage
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-590
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Rectifier for high voltage power supply.
2. General purpose high voltage rectifier. .
3. Rectification for X-ray generator high voltage
power supply.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.10 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
Non-Repetitive Peak Renerse Voltage
VRRM
VRSM
TA=25°C
TA=25°C
8.0 kV
-- kV
Average Forward Current Maximum
IFAVM
TA=55°C
TOIL=55°C
400 mA
-- mA
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
20
A
Junction Temperature
TJ
150 °C
Allowable Operation Case Temperature
Tc
-40~+150
°C
Storage Temperature
ELECTRICAL CHARACTERISTICS:
Items
TSTG
TA=25°C (Unless Otherwise Specified)
Symbols
Condition
-55~+175
°C
Data value Units
Maximum Forward Voltage Drop
VFM
at 25°C; at 100mA
12.9 V
Maximum Reverse Current
IR1 at 25°C; at VRRM
IR2 at 100°C; at VRRM
5.0 uA
50 uA
Maximum Reverse Recovery Time
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS
Junction Capacitance
CJ at 25°C; VR=0V; f=1MHz
14 pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2019-02 1 / 2

BR8F
BR8F
400mA 8.0kV 100nS
High Voltage Medium and High Current Diodes
----------------------------------------------------------------------------------------------------------------------------- -------
Forward Current Derating Curve
Reverse Recovery Measurement Waveform
Average Forward Current-%
125
TRR
100 IF
75
0
50
IRR
25
0 IR
0 25 50 75 100 125 150 175 Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
Temperature()
IR is typically the rated average forward current maximum
(IFAVM) of the D.U.T
Non-Repetitive Surge Current
100
Peak
Forward
Surge
Current
-%
75
50
25
0
1
Marking
Type
BR8F
10
Cycles (60Hz)
Code
BR8F
HVGT
100
Cathode Mark
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2019-02 2 / 2


Features BR8F 400mA 8.0kV 100nS High Voltage Me dium and High Current Diodes --------- --------------------------------------- --------------------------------------- -------------------------------------- ------- INTRODUCE: SHAPE DISPLAY: HV GT high voltage silicon rectifier diode s is made of high quality silicon wafe r chip and high reliability epoxy resi n sealing structure, and through profe ssional testing equipment inspection q ualified after to customers. FEATURES: 1. High overload surge capability. 2 . Avalanche Characteristic. 3. Medium Current, Low Forward Voltage 4. Confor m to RoHS and SGS. SIZE: (Unit:mm) HV GT NAME: DO-590 5. Epoxy resin molded in vacuumHave anticorrosion in the sur face. APPLICATIONS: 1. Rectifier for high voltage power supply. 2. General purpose high voltage rectifier. . 3. R ectification for X-ray generator high v oltage power supply. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Ter minal: welding axis. 3. Net weight: 2.10 grams (approx). MAXI.
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