ESJA23-05A 5.0mA 5.0kV 80nS
Fast Recovery High Voltage Silicon Rectifier Diode
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INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. Fast recovery.
2. High reliability design.
3. Low current, high voltage.
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-203
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Air purification, negative ions.
2. Electrostatic voltage doubling circuit.
3. Copier and X-ray.
4. Other high voltage rectifier circuits.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.12 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
VRRM
TA=25°C
Non-Repetitive Peak Renerse Voltage
VRSM
TA=25°C
Average Forward Current Maximum
IFAVM
TA=25°C TOIL=55°C
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified)
Items
Symbols
Condition
5.0 -5.0 -0.5 125 -40~+125 -40~+125
kV kV mA mA A °C °C °C
Data value Units
Maximum Forward Voltage Drop
VFM
at 25°C; at IFAVM
10 V
Maximum Reverse Current
IR1 at 25°C; at VRRM IR2 at 100°C; at VRRM
2.0 uA 5.0 uA
Maximum Reverse Recovery Time
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 80 nS
Junction Capacitance
CJ at 25°C; VR=0V; f=1MHz
3.0 pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai:
[email protected]
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2019-10 1 / 2
ESJA23-05A 5.0mA 5.0kV 80nS
Fast Recovery High Voltage Silicon Rectifier Diode
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Forward Current Derating Curve
Reverse Recovery Measurement Waveform
Average Forward Current-% 125
100
TRR IF
75 0
50 IRR
25
IR
0 Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
0 25 50 75 100 125 150 175 IR is typically the rated average forward current maximum
Temperature(℃)
(IFAVM) of the D.U.T
Non-Repetitive Surge Current
100
Peak Forward Surge Current
-%
75 50 25
0 1 10 100 Cycles (60Hz)
Marking
Type
ESJA23-05A
Packing in bulk
500Pcs/bag
Size:
100x150mm
Gross weight:
70g
Note: The suffix "TR" of this model indicates the tape packaging. Not "TR" means bulk packaging.
Code
10000Pcs/box 230x150x72mm
1520g
Cathode Mark
60000Pcs/Out box 321x248x263mm
9470g
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai:
[email protected]
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2019-10 2 / 2
.