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ESJA23-05A Dataheets PDF



Part Number ESJA23-05A
Manufacturers HVGT
Logo HVGT
Description Fast Recovery High Voltage Silicon Rectifier Diode
Datasheet ESJA23-05A DatasheetESJA23-05A Datasheet (PDF)

ESJA23-05A 5.0mA 5.0kV 80nS Fast Recovery High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. Fast recovery. .

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ESJA23-05A 5.0mA 5.0kV 80nS Fast Recovery High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. Fast recovery. 2. High reliability design. 3. Low current, high voltage. 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-203 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. Air purification, negative ions. 2. Electrostatic voltage doubling circuit. 3. Copier and X-ray. 4. Other high voltage rectifier circuits. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: welding axis. 3. Net weight: 0.12 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C Non-Repetitive Peak Renerse Voltage VRSM TA=25°C Average Forward Current Maximum IFAVM TA=25°C TOIL=55°C Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS Junction Temperature TJ Allowable Operation Case Temperature Tc Storage Temperature TSTG ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified) Items Symbols Condition 5.0 -5.0 -0.5 125 -40~+125 -40~+125 kV kV mA mA A °C °C °C Data value Units Maximum Forward Voltage Drop VFM at 25°C; at IFAVM 10 V Maximum Reverse Current IR1 at 25°C; at VRRM IR2 at 100°C; at VRRM 2.0 uA 5.0 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 80 nS Junction Capacitance CJ at 25°C; VR=0V; f=1MHz 3.0 pF GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2019-10 1 / 2 ESJA23-05A 5.0mA 5.0kV 80nS Fast Recovery High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------- Forward Current Derating Curve Reverse Recovery Measurement Waveform Average Forward Current-% 125 100 TRR IF 75 0 50 IRR 25 IR 0 Typical data capture points: IF =0.5IR , IR,IRR =0.25IR 0 25 50 75 100 125 150 175 IR is typically the rated average forward current maximum Temperature(℃) (IFAVM) of the D.U.T Non-Repetitive Surge Current 100 Peak Forward Surge Current -% 75 50 25 0 1 10 100 Cycles (60Hz) Marking Type ESJA23-05A Packing in bulk 500Pcs/bag Size: 100x150mm Gross weight: 70g Note: The suffix "TR" of this model indicates the tape packaging. Not "TR" means bulk packaging. Code 10000Pcs/box 230x150x72mm 1520g Cathode Mark 60000Pcs/Out box 321x248x263mm 9470g GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [email protected] GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2019-10 2 / 2 .


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