High Voltage Silicon Rectifier Diode
AF03-08D 30mA 8.0kV 100nS
High Voltage Silicon Rectifier Diode
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Description
AF03-08D 30mA 8.0kV 100nS
High Voltage Silicon Rectifier Diode
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INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. Fast switching.
2. High reliability.
3. High current capability.
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-308
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Rectifier for high voltage power supply.
2. General purpose high voltage rectifier. .
3. Rectification for X-ray generator high voltage
power supply.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 0.27 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage Non-Repetitive Peak Renerse Voltage
VRRM VRSM
TA=25°C TA=25°C
8.0 kV -- kV
Average Forward Current Maximum
IFAVM
TA=55°C TOIL=55°C
30 mA -- mA
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
0.5
A
Junction Temperature
TJ
125 °C
Allowable Operation Case Temperature
Tc
-40~+125
°C
Storage Temperature ELECTRICAL CHARACTERISTICS:
Items
TSTG
TA=25°C (Unl...
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