ESJC60S25 Diode Datasheet

ESJC60S25 Datasheet, PDF, Equivalent


Part Number

ESJC60S25

Description

High Voltage Silicon Rectifier Diode

Manufacture

HVGT

Total Page 2 Pages
Datasheet
Download ESJC60S25 Datasheet


ESJC60S25
ESJC60S25
300mA 25kV --nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. High overload surge capability.
2. Avalanche Characteristic.
3. Medium Current, Low Forward Voltage
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-721
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Rectifier for high voltage power supply.
2. General purpose high voltage rectifier.
3. Beauty equipment.
4. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.10 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
Non-Repetitive Peak Renerse Voltage
VRRM
VRSM
TA=25°C
TA=25°C
25 kV
-- kV
Average Forward Current Maximum
IFAVM
TA=40°C
TOIL=55°C
300 mA
-- mA
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
30
A
Junction Temperature
TJ
150 °C
Allowable Operation Case Temperature
Tc
-40~+150
°C
Storage Temperature
ELECTRICAL CHARACTERISTICS:
Items
TSTG
TA=25°C (Unless Otherwise Specified)
Symbols
Condition
-40~+150
°C
Data value Units
Maximum Forward Voltage Drop
VFM
at 25°C; at IFAVM
21 V
Maximum Reverse Current
IR1 at 25°C; at VRRM
IR2 at 100°C; at VRRM
2.0 uA
50 uA
Maximum Reverse Recovery Time
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS
Junction Capacitance
CJ at 25°C; VR=0V; f=1MHz
-- pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-10 1 / 2

ESJC60S25
ESJC60S25
300mA 25kV --nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
Forward Current Derating Curves
125
100
Average
Forward
Current
-%
75
50
25
0
0 25
50 75 100 125 150
Temperature()
175
Non-Repetitive Surge Current
100
Peak
Forward
Surge
Current
-%
75
50
25
0
1
Marking
10
Cycles (60Hz)
Type
ESJC60S25
Code
ESJC60S25
HVGT
100
Cathode Mark
Min Packing
50PCS
Film bag packaging
Packaging Information
Carton Packaging
10 bag=500PCS
230mmX150mmX72mm
Outer Carton Packaging
6 box=3000PCS
321mmX248mmX263mm
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-10 2 / 2


Features ESJC60S25 300mA 25kV --nS High Voltage Silicon Rectifier Diode ------------- --------------------------------------- --------------------------------------- ---------------------------------- ---- --- INTRODUCE: SHAPE DISPLAY: HVGT h igh voltage silicon rectifier diodes is made of high quality silicon wafer ch ip and high reliability epoxy resin se aling structure, and through professio nal testing equipment inspection quali fied after to customers. FEATURES: 1. High overload surge capability. 2. Av alanche Characteristic. 3. Medium Curr ent, Low Forward Voltage 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT N AME: DO-721 5. Epoxy resin molded in v acuumHave anticorrosion in the surface . APPLICATIONS: 1. Rectifier for high voltage power supply. 2. General purp ose high voltage rectifier. 3. Beauty equipment. 4. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Ter minal: welding axis. 3. Net weight: 2. 10 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absol.
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