1N6513 Diode Datasheet

1N6513 Datasheet, PDF, Equivalent


Part Number

1N6513

Description

Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

Manufacture

HVGT

Total Page 2 Pages
Datasheet
Download 1N6513 Datasheet


1N6513
1N6513
2.0A 2.0kV 70nS
Ultra-Fast Recovery High Voltage Silicon Rectifying Diode
----------------------------------------------------------------------------------------------------------------------------- -------
Introduce:
Reference Shape:
HVGT high voltage silicon rectifier diodes is made of
high quality glass passivated chip and high reliability
epoxy resin sealing structure, and through
professional testing equipment inspection qualified
after to customers.
Features:
High reliability design.
GPP chip.
High frequency, super fast recovery.
Conform to RoHS and SGS.
Epoxy resin molded in vacuumHave anticorrosion in
the surface.
Applications:
HVGT Name:
Unit: (mm)
High voltage multiplier circuit.
DO-590
X-ray power supply.
Lead Diameter 1.28±0.03
General purpose high voltage rectifier.
Other.
Mechanical Data:
Case: epoxy resin molding.
Terminal: welding axis.
Net weight: 2.1 grams (approx).
29.0
(min)
9.0
(±0.5)
Maximum Ratings And Characteristics: (Absolute Maximum Ratings)
29.0
(min)
5.0
(±0.2)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
VRRM
TA=25°C
Non-Repetitive Peak Renerse Voltage
VRSM
TA=25°C
Average Forward Current Maximum
IFAVM
TA=55°C
TOIL=100°C
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
Electrical Characteristics: TA=25°C (Unless Otherwise Specified)
Items
Symbols
Condition
2.0
--
2.0
1.5
60
150
-40~+150
-40~+150
kV
kV
A
A
A
°C
°C
°C
Data value Units
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
VFM at 25°C; at IFAVM
3.8 V
IR1 at 25°C; at VRRM
1.0 uA
IR2 at 100°C; at VRRM
25 uA
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 70 nS
CJ at 25°C; VR=50VDC; f=1KHz
25 pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 Jan-20 1 / 2

1N6513
1N6513
2.0A 2.0kV 70nS
Ultra-Fast Recovery High Voltage Silicon Rectifying Diode
----------------------------------------------------------------------------------------------------------------------------- -------
Forward Current Derating Curve
Reverse Recovery Measurement Waveform
Average Forward Current-%
125
100
TRR
IF
75 0
50 IRR
25
IR
0 Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
0 25 50 75 100 125 150 175 IR is typically the rated average forward current maximum
Temperature(°C)
(IFAVM) of the D.U.T
Non-Repetitive Surge Current
100
Peak
Forward
Surge
Current
-%
75
50
25
0
1 10 100
Cycles (60Hz)
Marking
Type
1N6513
Code
1N6513
HVGT
Cathode Mark
Bulk Packaging
Tape Reel
Packaging Standard
Label part munber nothing "TR"
Package standard download link:
http://www.hvgtsemi.com/newsv_494.html
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 Jan-20 2 / 2


Features 1N6513 2.0A 2.0kV 70nS Ultra-Fast Reco very High Voltage Silicon Rectifying Di ode ---------------------------------- --------------------------------------- --------------------------------------- ------------- ------- Introduce: Refe rence Shape: HVGT high voltage silicon rectifier diodes is made of high quali ty glass passivated chip and high relia bility epoxy resin sealing structure, a nd through professional testing equipme nt inspection qualified after to custom ers. Features: High reliability design. GPP chip. High frequency, super fast r ecovery. Conform to RoHS and SGS. Epoxy resin molded in vacuumHave anticorrosi on in the surface. Applications: HVGT Name: Unit: (mm) High voltage multip lier circuit. DO-590 X-ray power supp ly. Lead Diameter 1.28±0.03 General purpose high voltage rectifier. Other. Mechanical Data: Case: epoxy resin m olding. Terminal: welding axis. Net wei ght: 2.1 grams (approx). 29.0 (min) 9 .0 (±0.5) Maximum Ratings And Characteristics: (Absolute Maximu.
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