HVRW3 Diodes Datasheet

HVRW3 Datasheet, PDF, Equivalent


Part Number

HVRW3

Description

High Voltage High Current Diodes

Manufacture

HVGT

Total Page 2 Pages
Datasheet
Download HVRW3 Datasheet


HVRW3
HVRW3
1.5A 3.0kV 150nS
High Voltage High Current Diodes
----------------------------------------------------------------------------------------------------------------------------- -------
INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. High overload surge capability.
2. Avalanche Characteristic.
3. High Current, Low Forward Voltage
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-990
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Rectifier for high voltage power supply.
2. General purpose high voltage rectifier. .
3. Rectification for X-ray generator high voltage
power supply.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.30 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
Non-Repetitive Peak Renerse Voltage
VRRM
VRSM
TA=25°C
TA=25°C
3.0 kV
-- kV
Average Forward Current Maximum
IFAVM
TA=55°C
TOIL=55°C
1.5 A
-- A
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
200
A
Junction Temperature
TJ
150 °C
Allowable Operation Case Temperature
Tc
-40~+150
°C
Storage Temperature
ELECTRICAL CHARACTERISTICS:
Items
TSTG
TA=25°C (Unless Otherwise Specified)
Symbols
Condition
-40~+150
°C
Data value Units
Maximum Forward Voltage Drop
VFM
at 25°C; at IFAVM
5.0 V
Maximum Reverse Current
IR1 at 25°C; at VRRM
IR2 at 100°C; at VRRM
10 uA
50 uA
Maximum Reverse Recovery Time
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR 150 nS
Junction Capacitance
CJ at 25°C; VR=0V; f=1MHz
35 pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2019-02 1 / 2

HVRW3
HVRW3
1.5A 3.0kV 150nS
High Voltage High Current Diodes
----------------------------------------------------------------------------------------------------------------------------- -------
Forward Current Derating Curve
Reverse Recovery Measurement Waveform
Average Forward Current-%
125
TRR
100 IF
75
0
50
IRR
25
0 IR
0 25 50 75 100 125 150 175 Typical data capture points: IF =0.5IR , IR,IRR =0.25IR
Temperature()
IR is typically the rated average forward current maximum
(IFAVM) of the D.U.T
Non-Repetitive Surge Current
100
Peak
Forward
Surge
Current
-%
75
50
25
0
1
Marking
Type
HVRW3
10
Cycles (60Hz)
Code
HVRW3
HVGT
100
Cathode Mark
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2019-02 2 / 2


Features HVRW3 1.5A 3.0kV 150nS High Voltage Hi gh Current Diodes -------------------- --------------------------------------- --------------------------------------- --------------------------- ------- IN TRODUCE: SHAPE DISPLAY: HVGT high vol tage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing s tructure, and through professional tes ting equipment inspection qualified af ter to customers. FEATURES: 1. High o verload surge capability. 2. Avalanche Characteristic. 3. High Current, Low Forward Voltage 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-9 90 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLIC ATIONS: 1. Rectifier for high voltage power supply. 2. General purpose high voltage rectifier. . 3. Rectification for X-ray generator high voltage power supply. MECHANICAL DATA: 1. Case: ep oxy resin molding. 2. Terminal: weldin g axis. 3. Net weight: 2.30 grams (approx). MAXIMUM RATINGS A.
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