HV600S20 Diode Datasheet

HV600S20 Datasheet, PDF, Equivalent


Part Number

HV600S20

Description

High Voltage Silicon Rectifier Diode

Manufacture

HVGT

Total Page 2 Pages
Datasheet
Download HV600S20 Datasheet


HV600S20
HV600S20
250mA 20kV --nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
INTRODUCE:
SHAPE DISPLAY:
HVGT high voltage silicon rectifier diodes is made
of high quality silicon wafer chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
FEATURES:
1. High overload surge capability.
2. Avalanche Characteristic.
3. Medium Current, Low Forward Voltage
4. Conform to RoHS and SGS.
SIZE: (Unit:mm)
HVGT NAME: DO-721
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
APPLICATIONS:
1. Rectifier for high voltage power supply.
2. General purpose high voltage rectifier.
3. Beauty equipment.
4. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: welding axis.
3. Net weight: 2.10 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Data Value Units
Repetitive Peak Renerse Voltage
Non-Repetitive Peak Renerse Voltage
VRRM
VRSM
TA=25°C
TA=25°C
20 kV
-- kV
Average Forward Current Maximum
IFAVM
TA=55°C
TOIL=55°C
250 mA
-- mA
Non-Repetitive Forward Surge Current
IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS
30
A
Junction Temperature
TJ
150 °C
Allowable Operation Case Temperature
Tc
-40~+150
°C
Storage Temperature
ELECTRICAL CHARACTERISTICS:
Items
TSTG
TA=25°C (Unless Otherwise Specified)
Symbols
Condition
-40~+150
°C
Data value Units
Maximum Forward Voltage Drop
VFM
at 25°C; at IFAVM
17 V
Maximum Reverse Current
IR1 at 25°C; at VRRM
IR2 at 100°C; at VRRM
30 uA
50 uA
Maximum Reverse Recovery Time
TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS
Junction Capacitance
CJ at 25°C; VR=0V; f=1MHz
-- pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-10 1 / 2

HV600S20
HV600S20
250mA 20kV --nS
High Voltage Silicon Rectifier Diode
----------------------------------------------------------------------------------------------------------------------------- -------
Forward Current Derating Curves
125
100
Average
Forward
Current
-%
75
50
25
0
0 25
50 75 100 125 150
Temperature()
175
Non-Repetitive Surge Current
100
Peak
Forward
Surge
Current
-%
75
50
25
0
1
Marking
Type
HV600S20
10
Cycles (60Hz)
Code
HV600S20
HVGT
100
Cathode Mark
Min Packing
50PCS
Film bag packaging
Packaging Information
Carton Packaging
10 bag=500PCS
230mmX150mmX72mm
Outer Carton Packaging
6 box=3000PCS
321mmX248mmX263mm
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com
GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2018-10 2 / 2


Features HV600S20 250mA 20kV --nS High Voltage Silicon Rectifier Diode -------------- --------------------------------------- --------------------------------------- --------------------------------- ----- -- INTRODUCE: SHAPE DISPLAY: HVGT hi gh voltage silicon rectifier diodes is made of high quality silicon wafer chi p and high reliability epoxy resin sea ling structure, and through profession al testing equipment inspection qualif ied after to customers. FEATURES: 1. High overload surge capability. 2. Ava lanche Characteristic. 3. Medium Curre nt, Low Forward Voltage 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NA ME: DO-721 5. Epoxy resin molded in va cuumHave anticorrosion in the surface. APPLICATIONS: 1. Rectifier for high voltage power supply. 2. General purpo se high voltage rectifier. 3. Beauty e quipment. 4. Other. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Term inal: welding axis. 3. Net weight: 2.1 0 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: (Absolu.
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