ISL70020SEH Transistors Datasheet

ISL70020SEH Datasheet, PDF, Equivalent


Part Number

ISL70020SEH

Description

65A Enhancement Mode GaN Power Transistors

Manufacture

Intersil

Total Page 13 Pages
Datasheet
Download ISL70020SEH Datasheet


ISL70020SEH
Datasheet
ISL70020SEH, ISL73020SEH
40V, 65A Enhancement Mode GaN Power Transistors
The ISL70020SEH and ISL73020SEH are 40V
N-channel enhancement mode GaN power
transistors. These GaN FETs have been
characterized for destructive Single Event Effects
(SEE) and tested for Total Ionizing Dose (TID)
radiation. Applications for these devices include
commercial aerospace, medical, and nuclear power
generation.
The exceptionally high electron mobility and low
temperature coefficient of the GaN allows for very low
rDS(ON), while its lateral device structure and majority
carrier diode provide exceptionally low QG and zero
QRR. The end result is a device that can operate at a
higher switching frequency with more efficiency while
reducing the overall solution size.
By combining the exceptional performance of the
GaN FET in a hermetically sealed Surface Mount
Device (SMD) package with manufacturing in a
MIL-PRF-38535 like flow results in best-in-class
power transistors that are ideally suited for high
reliability applications.
Related Literature
For a full list of related documents, visit our website
ISL70020SEH, ISL73020SEH device pages
Features
• Very low rDS(ON) 3.5mΩ (typical)
• Ultra low total gate charge 19nC (typical)
• ISL70020SEH radiation acceptance testing
High dose rate (50-300rad(Si)/s): 100krad(Si)
Low dose rate (0.01rad(Si)/s): 75krad(Si)
• ISL73020SEH radiation acceptance testing
Low dose rate (0.01rad(Si)/s): 75krad(Si)
• SEE hardness (see the SEE report for details)
SEL/SEB LETTH (VDS = 40V, VGS = 0V):
86.4MeV•cm2/mg
• Ultra small hermetically sealed 4 Ld Surface Mount
Device (SMD) package
Package area: 42mm2
• Full military-temperature range operation
TA = -55°C to +125°C
TJ = -55°C to +150°C
Applications
• Switching regulation
• Motor drives
• Relay drives
• Inrush protection
• Down hole drilling
• High reliability industrial
Figure 1. ISL70020SEH 4 Ld SMD Package
12
ID = 1A
10 ID = 10A
ID = 20A
8
ID = 32A
6 ID = 40A
4
2
0
2.5 3.0 3.5 4.0 4.5
Gate-Source Voltage (V)
Figure 2. On-State Resistance (+25°C)
5.0
R34DS0007EU0101 Rev.1.01
Nov.7.19
Page 1 of 13

ISL70020SEH
ISL70020SEH, ISL73020SEH
1. Overview
1. Overview
1.1 Ordering Information
Ordering Part Number (Note 1)
Radiation Hardness (Total Temperature
Ionizing Dose)
Range (°C)
Package
(RoHS Compliant)
Package
Drawing
ISL70020SEHML
HDR to 100krad(Si)
LDR to 75krad(Si)
-55 to +125
4 Ld SMD
J4.A
ISL73020SEHML
LDR to 75krad(Si)
-55 to +125
4 Ld SMD
J4.A
ISL70020SEHMX
HDR to 100krad(Si) +25 Die -
LDR to 75krad(Si)
ISL73020SEHMX
LDR to 75krad(Si)
+25 Die -
ISL70020SEHMX/SAMPLE Note 2
N/A
+25 Die -
ISL73020SEHMX/SAMPLE Note 2
N/A
+25 Die -
ISL70020SEHL/PROTO Note 2
N/A
-55 to +125
4 Ld SMD
J4.A
ISL73020SEHL/PROTO Note 2
N/A
-55 to +125
4 Ld SMD
J4.A
ISL70040SEHEV5Z (Note 3)
ISL70040SEH and ISL70020SEH Evaluation Board
Notes:
1. These Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with
both SnPb and Pb-free soldering operations.
2. The /PROTO and /SAMPLE parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect (SEE) immunity. These
parts are intended for engineering evaluation purposes only. The /PROTO and /SAMPLE parts meet the electrical limits and conditions
across the temperature range specified in this datasheet and are of the same form and fit as the ISL70020SEHML/ISL73020SEHML
devices. The /PROTO and /SAMPLE parts do not come with a Certificate of Conformance (C of C) and have no accompanying data or
documentation.
3. Evaluation board uses the /PROTO parts and /PROTO parts are not rated or certified for Total Ionizing Dose (TID) or Single Event Effect
(SEE) immunity.
Table 1. Key Differences Between Family of Parts
Part Number
Breakdown Voltage (V
Drain Current (A)
ISL7x020SEH
40 65
ISL7x023SEH
100V
60
ISL7x024SEH
200V
7.5
rDS(ON) (mΩ)
3.5
5
45
QG (nC)
19
14
2.5
R34DS0007EU0101 Rev.1.01
Nov.7.19
Page 2 of 13


Features Datasheet ISL70020SEH, ISL73020SEH 40V, 65A Enhancement Mode GaN Power Transis tors The ISL70020SEH and ISL73020SEH a re 40V N-channel enhancement mode GaN p ower transistors. These GaN FETs have b een characterized for destructive Singl e Event Effects (SEE) and tested for To tal Ionizing Dose (TID) radiation. Appl ications for these devices include comm ercial aerospace, medical, and nuclear power generation. The exceptionally hig h electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode pr ovide exceptionally low QG and zero QRR . The end result is a device that can o perate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining th e exceptional performance of the GaN FE T in a hermetically sealed Surface Moun t Device (SMD) package with manufacturi ng in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for.
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