Silicon Epitaxial Trench Pin Diode
RKP202KN
Silicon Epitaxial Trench Pin Diode for Antenna Switching
REJ03G1312-0100 Rev.1.00
Dec 16, 2005
Features
• Adopt...
Description
RKP202KN
Silicon Epitaxial Trench Pin Diode for Antenna Switching
REJ03G1312-0100 Rev.1.00
Dec 16, 2005
Features
Adopting the trench structure improves low capacitance. (C = 0.43 pF max) Low forward resistance. (rf = 1.80 Ω max) Low operation current. Ultra small leadless Package (0805type; the use of an undersurface electrode structure) for use in compact and
products.
Ordering Information
Type No. RKP202KN
Laser Mark 5
Package Name MP8
Package Code (Previous Code) PXSN0002ZA-A
Pin Arrangement
5
Cathode mark Mark
12
1. Cathode 2. Anode
Rev.1.00 Dec 16, 2005 page 1 of 4
RKP202KN
Absolute Maximum Ratings
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature
VR IF Pd Tj Tstg
Symbol
Value 30 100 100 125
−55 to +125
(Ta = 25°C)
Unit V mA
mW °C °C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max Unit
Test Condition
Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *1
IR VF C rf —
— — 100 nA VR = 30 V
—
—
0.90
V IF = 2 mA
—
—
0.43
pF VR = 1 V, f = 1 MHz
—
—
1.80
Ω IF = 2 mA, f = 100 MHz
100 —
— V C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the MP8 package.
Rev.1.00 Dec 16, 2005 page 2 of 4
RKP202KN
Main Characteristic
10-2
10-4
Forward current IF (A)
10-6 10-8
10-10
10-12 0
0.2 0.4 0.6 0.8 1.0
Forwar...
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