2SK3147L MOSFET Datasheet

2SK3147L Datasheet, PDF, Equivalent


Part Number

2SK3147L

Description

Silicon N-Channel Power MOSFET

Manufacture

Renesas

Total Page 9 Pages
Datasheet
Download 2SK3147L Datasheet


2SK3147L
Data Sheet
2SK3147(L), 2SK3147(S)
100V, 5A, 0.13max.
Silicon N Channel Power MOS FET
High Speed Power Switching
R07DS1254EJ0400
(Previous: REJ03G1072-0300)
Rev.4.00
Mar 25, 2015
Features
Low on-resistance
RDS = 0.1 typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
12 3
G
D
1. Gate
2. Drain
3. Source
4. Drain
1
23
S
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50 
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Ratings
100
20
5
20
5
5
2.5
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS1254EJ0400 Rev.4.00
Mar 25, 2015
Page 1 of 8

2SK3147L
2SK3147(L), 2SK3147(S)
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
100
20
1.0
3.5
Typ
0.1
0.13
6
420
185
100
10
35
110
60
0.85
85
Max
10
10
2.5
0.13
0.17
Unit
V
V
A
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = 100 A, VDS = 0
VGS = 16 V, VDS = 0
VDS = 100 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 3 A, VGS = 10 VNote4
ID = 3 A, VGS = 4 V Note4
ID = 3 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 3 A, VGS = 10V,
RL = 10
IF = 5 A, VGS = 0
IF = 5 A, VGS = 0
diF/ dt = 50 A/ s
R07DS1254EJ0400 Rev.4.00
Mar 25, 2015
Page 2 of 8


Features Data Sheet 2SK3147(L), 2SK3147(S) 100V, 5A, 0.13Ωmax. Silicon N Channel Powe r MOS FET High Speed Power Switching R 07DS1254EJ0400 (Previous: REJ03G1072-03 00) Rev.4.00 Mar 25, 2015 Features  Low on-resistance RDS = 0.1  typ. High speed switching  4 V gate dr ive device can be driven from 5 V sourc e Outline RENESAS Package code: PRSS0 004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code: PRSS0004ZD-C (Pac kage name: DPAK(S)) 4 12 3 G D 1. G ate 2. Drain 3. Source 4. Drain 1 23 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltag e Drain current Drain peak current Body -drain diode reverse drain current Aval anche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1 % 2. Value at Tc = 25 C 3. Value at Tch = 25°C, Rg  50  Symbol VDSS VGSS ID ID(pulse)Not e1 IDR IAP Note3 EAR Note3 Pch Note2 Tc h Tstg Ratings 100 20 5 20 5 5 2.5 20 150 –55 to +150 (Ta = 25°C) Unit V V A A A A m.
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