R1Q6A7218ABG RAM Datasheet

R1Q6A7218ABG Datasheet, PDF, Equivalent


Part Number

R1Q6A7218ABG

Description

72-Mbit DDRII SRAM Separate I/O 2-word Burst RAM

Manufacture

Renesas

Total Page 30 Pages
Datasheet
Download R1Q6A7218ABG Datasheet


R1Q6A7218ABG
R1Q6A7236ABG / R1Q6A7218ABG Series
R1Q6A7236ABG
R1Q6A7218ABG
72-Mbit DDRII SRAM Separate I/O
2-word Burst
R10DS0179EJ0011
Rev. 0.11
2013.01.15
Description
The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous
double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are
controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products
are suitable for applications which require synchronous operation, high speed, low voltage, high density and
wide bit configuration. These products are packaged in 165-pin plastic FBGA package.
Features
Power Supply
• 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
Clock
• Fast clock cycle time for high bandwidth
• Two input clocks (K and /K) for precise DDR timing at clock rising edges only
• Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches
• Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems
• Clock-stop capability with μs restart
I/O
• Separate independent read and write data ports
• DDR read or write operation initiated each cycle
• HSTL I/O
• User programmable output impedance
• DLL/PLL circuitry for wide output data valid window and future frequency scaling
Function
• Two-tick burst for low DDR transaction size
• Internally self-timed write control
• Simple control logic for easy depth expansion
• JTAG 1149.1 compatible test access port
Package
• 165 FBGA package (15 x 17 x 1.4 mm)
Notes: 1. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress
Semiconductor, IDT, Samsung, and Renesas Electronics Corp. (QDR Co-Development Team)
2. The specifications of this device are subject to change without notice. Please contact your nearest
Renesas Electronics Sales Office regarding specifications.
3. Refer to
"http://www.renesas.com/products/memory/fast_sram/qdr_sram/index.jsp"
for the latest and detailed information.
4. Descriptions about x9 parts in this datasheet are just for reference.
Rev. 0.11 : 2013.01.15
R10DS0179EJ0011

R1Q6A7218ABG
Common
R1Q6A7236ABG / R1Q6A7218ABG Series
Part Number Definition
Part Number Definition Table
Column No. 0 1 2 3 4 5 6 7 8 9 10 11 - 12 13 14 15 16
Example
R 1Q6 A 7 2 1 8 ABG - 3 0 RB 0
The above part number is just example for 72M DDRII SIO B2 x18 333MHz, 15x17mm PKG, Pb-free part.
No.
0-1
2-3
Note1:
Note2:
Note3:
Note4:
- Comments
R1 Renesas Memory Prefix
Q2 QDR II B2[*1]
(L15)[*2]
Q3 QDR II B4
(L15)
Q4 DDR II B2
(L15)
Q5 DDR II B4
(L15)
Q6 DDR II B2 SIO[*3] (L15)
QA QDR II+ B4 L25[*2]
QB DDR II+ B2 L25
QC DDR II+ B4 L25
QD QDR II+ B4 L25 w/ODT[*4]
QE DDR II+ B2 L25 w/ODT
QF DDR II+ B4 L25 w/ODT
QG QDR II+ B4 L20
QH DDR II+ B2 L20
QJ DDR II+ B4 L20
QK QDR II+ B4 L20 w/ODT
QL DDR II+ B2 L20 w/ODT
QM DDR II+ B4 L20 w/ODT
QN QDR II+ B2 L20
QP QDR II+ B2 L20 w/ODT
--
No.
4
5-6
7-8
9
10-11
-
- Comments
A Vdd = 1.8 V
36 Density = 36Mb
72 Density = 72Mb
44 Density = 144Mb
88 Density = 288Mb
09 Data width = 9bit
18 Data width = 18bit
36 Data width = 36bit
R 1st Generation
A 2nd Generation
B 3rd Generation
C 4th Generation
D 5th Generation
E 6th Generation
F 7th Generation
BG PKG= BGA 15x17 mm
BB PKG= BGA 13x15 mm
--
No.
12-13
14
15
16
- Comments
60 Frequency = 167MHz
50 Frequency = 200MHz
40 Frequency = 250MHz
36 Frequency = 275MHz
33 Frequency = 300MHz
30 Frequency = 333MHz
27 Frequency = 375MHz
25 Frequency = 400MHz
22 Frequency = 450MHz
20 Frequency = 500MHz
19 Frequency = 533MHz
18 Frequency = 550MHz
R
Commercial temp.
Ta range = 0é to 70é
I
Industrial temp.
Ta range = -40é to 85é
A Pb-and Tray
B Pb-free and Tray
T Pb-and Tape&Reel
S Pb-free and Tape&Reel
0 to 9,
A to Z Renesas internal use
or None
[*1] B=Burst length (B2: Burst length=2, B4: Burst length=4)
[*2] L=Read Latency (L15: Read Latency = 1.5 cycle, L20: 2.0 cycle, L25: 2.5 cycle)
[*3] SIO=Separate I/O
[*4] ODT=On die termination
Package Marking Name
Pb-parts: Marking Name = Part Number(0-14)
Pb-free parts: Marking Name = Part Number(0-14) + "PB-F"
(Example) R1QAA4436RBG-20R Pb-F ----- Pb-parts
(Example) R1QAA4436RBG-20R PB-F ----- Pb-free parts
Pb-free: RoHS Compliance Level = 5/6
Pb-free: RoHS Compliance Level = 6/6
R1Q*A series support both "Commercial" and "Industrial" temperatures
by "Industrial" temperature parts.
Rev. 0.11 : 2013.01.15
R10DS0179EJ0011
PAGE:2


Features R1Q6A7236ABG / R1Q6A7218ABG Series R1Q6 A7236ABG R1Q6A7218ABG 72-Mbit DDRII SR AM Separate I/O 2-word Burst R10DS0179 EJ0011 Rev. 0.11 2013.01.15 Descriptio n The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304 -word by 18-bit synchronous double data rate static RAM fabricated with advanc ed CMOS technology using full CMOS six- transistor memory cell. It integrates u nique synchronous peripheral circuitry and a burst counter. All input register s are controlled by an input clock pair (K and /K) and are latched on the posi tive edge of K and /K. These products a re suitable for applications which requ ire synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packa ged in 165-pin plastic FBGA package. F eatures ႑ Power Supply • 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ) ႑ Clock • Fast clock cycle time fo r high bandwidth • Two input clocks ( K and /K) for precise DDR timing at clock rising edges only • Two input c.
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