2SK3136 MOSFET Datasheet

2SK3136 Datasheet, PDF, Equivalent


Part Number

2SK3136

Description

Silicon N-Channel MOSFET

Manufacture

Renesas

Total Page 8 Pages
Datasheet
Download 2SK3136 Datasheet


2SK3136
2SK3136
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) =4.5 mtyp.
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
123
G
REJ03G1068-0400
(Previous: ADE-208-696B)
Rev.4.00
Sep 20, 2005
D
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.4.00 Sep 07, 2005 page 1 of 7

2SK3136
2SK3136
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
I Note 1
D(pulse)
IDR
I Note 3
AP
E Note 3
AR
Pch Note 2
Tch
Tstg
Ratings
40
±20
75
300
75
50
333
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
40
1.0
50
Typ
4.5
6.5
80
6800
1300
380
130
25
30
60
300
550
400
1.05
90
Max
±0.1
10
2.5
5.8
10
Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 40 V, VGS = 0
ID = 1 mA, VDS = 10 V Note 4
ID = 40 A, VGS = 10 V Note 4
ID = 40 A, VGS = 4 V Note 4
ID = 40 A, VDS = 10 V Note 4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 25 V, VGS = 10 V,
ID = 75 A
VGS = 10 V, ID = 40 A,
RL = 0.75
IF = 75 A, VGS = 0
IF = 75 A, VGS = 0
diF/ dt = 50 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 7


Features 2SK3136 Silicon N Channel MOS FET High S peed Power Switching Features • Low on-resistance RDS(on) =4.5 mΩ typ. Low drive current • 4 V gate drive device can be driven from 5 V source Ou tline RENESAS Package code: PRSS0004AC- A (Package name: TO-220AB) 123 G REJ 03G1068-0400 (Previous: ADE-208-696B) R ev.4.00 Sep 20, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK3136 Absolute Ma ximum Ratings Item Drain to source volt age Gate to source voltage Drain curren t Drain peak current Body-drain diode r everse drain current Avalanche current Avalanche energy Channel dissipation Ch annel temperature Storage temperature N otes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I Note 1 D(pulse) IDR I Note 3 AP E Note 3 AR Pch Note 2 Tch Tstg Ra tings 40 ±20 75 300 75 50 333 100 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Electrical Characteristics Item Drain to source breakdown voltage G.
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