RJL5013DPP MOSFET Datasheet

RJL5013DPP Datasheet, PDF, Equivalent


Part Number

RJL5013DPP

Description

Silicon N-Channel MOSFET

Manufacture

Renesas

Total Page 4 Pages
Datasheet
Download RJL5013DPP Datasheet


RJL5013DPP
RJL5013DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
Built-in fast recovery diode
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1
23
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
VGSS
IDNote4
ID
Note1
(pulse)
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
4. Limited by maximum safe operation area
REJ03G1754-0100
Rev.1.00
Nov 17, 2008
D
1. Gate
2. Drain
3. Source
S
Ratings
500
±30
14
42
14
42
3
0.5
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1754-0100 Rev.1.00 Nov 17, 2008
Page 1 of 3

RJL5013DPP
RJL5013DPP
Electrical Characteristics
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
500
2.0
Notes: 5. Pulse test
Typ
0.42
1400
150
19
30
24
88
17
37.6
7.2
17
0.95
150
Max
10
±0.1
4.0
0.51
Unit
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 7 A, VGS = 10 V Note5
1.60
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID = 7 A
ns VGS = 10 V
ns RL = 35.7
ns Rg = 10
nC VDD = 400 V
nC VGS = 10 V
nC ID = 14 A
V IF = 14 A, VGS = 0 Note5
ns IF = 14 A, VGS = 0
diF/dt = 100 A/µs
REJ03G1754-0100 Rev.1.00 Nov 17, 2008
Page 2 of 3


Features RJL5013DPP Silicon N Channel MOS FET Hig h Speed Power Switching Features • B uilt-in fast recovery diode • Low on- resistance • Low leakage current • High speed switching Outline RENESAS Pa ckage code: PRSS0003AB-A (Package name: TO-220FN) 1 23 G Absolute Maximum R atings Item Symbol Drain to source v oltage VDSS Gate to source voltage Dr ain current Drain peak current VGSS I DNote4 ID Note1 (pulse) Body-drain d iode reverse drain current Body-drain d iode reverse drain peak current Avalanc he current Avalanche energy Channel dis sipation IDR IDR Note1 (pulse) IAPN ote3 EARNote3 Pch Note2 Channel to c ase thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cyc le ≤ 1% 2. Value at Tc = 25°C 3. S Tch = 25°C, Tch ≤ 150°C 4. Limited by maximum safe operation area REJ03G 1754-0100 Rev.1.00 Nov 17, 2008 D 1. G ate 2. Drain 3. Source S Ratings 500 30 14 42 14 42 3 0.5 30 4.17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W .
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