2SK1773 MOSFET Datasheet

2SK1773 Datasheet, PDF, Equivalent


Part Number

2SK1773

Description

Silicon N-Channel MOSFET

Manufacture

Renesas

Total Page 7 Pages
Datasheet
Download 2SK1773 Datasheet


2SK1773
2SK1773
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter
REJ03G0972-0200
(Previous: ADE-208-1319)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1
2
3
G
S
1. Gate
2. Drain
(Flange)
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6

2SK1773
2SK1773
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 3. Pulse Test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
1000
±30
2.0
3.2
Typ
1.5
5.0
1700
700
315
25
110
210
135
0.85
1050
Ratings
1000
±30
5
15
5
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
3.0
2.0
Unit
V
V
µA
µA
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 800 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 3 A, VGS = 10 V*3
S ID = 3 A, VDS = 20 V*3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 3 A, VGS = 10 V,
ns RL = 10
ns
ns
V IF = 5 A, VGS = 0
ns IF = 5 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6


Features 2SK1773 Silicon N Channel MOS FET Applic ation High speed power switching Featur es • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for s witching regulator, DC-DC converter RE J03G0972-0200 (Previous: ADE-208-1319) Rev.2.00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004ZE-A (Package na me: TO-3P) D 1 2 3 G S 1. Gate 2. D rain (Flange) 3. Source Rev.2.00 Sep 0 7, 2005 page 1 of 6 2SK1773 Absolute M aximum Ratings Item Drain to source vo ltage Gate to source voltage Drain curr ent Drain peak current Body to drain di ode reverse drain current Channel dissi pation Channel temperature Storage temp erature Notes: 1. PW ≤ 10 µs, duty c ycle ≤ 1 % 2. Value at Tc = 25°C Ele ctrical Characteristics Symbol VDSS VG SS ID ID(pulse)*1 IDR Pch*2 Tch Tstg I tem Drain to source breakdown voltage G ate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state res.
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