LM2722 Driver Datasheet

LM2722 Datasheet, PDF, Equivalent


Part Number

LM2722

Description

High Speed Synchronous/Asynchronous MOSFET Driver

Manufacture

etcTI

Total Page 10 Pages
Datasheet
Download LM2722 Datasheet


LM2722
NRND
LM2722
www.ti.com
SNVS169D – NOVEMBER 2001 – REVISED MARCH 2013
LM2722 High Speed Synchronous/Asynchronous MOSFET Driver
Check for Samples: LM2722
FEATURES
1
2 Synchronous or Asynchronous Operation
• Adaptive Shoot-Through Protection
• Input Under-Voltage-Lock-Out
• Typical 20ns Internal Delay
• Plastic 8-pin SOIC package
APPLICATIONS
• Driver for LM2723 Intel Mobile Northwood CPU
Core Power Supply.
• High Current DC/DC Power Supplies
• High Input Voltage Switching Regulators
• Fast Transient Microprocessors
DESCRIPTION
The LM2722, part of the LM2726 family, is designed
to be used with multi-phase controllers. This part
differs from the LM2726 by changing the functionality
of the SYNC_EN pin from a whole chip enable to a
low side MOSFET enable. As a result, the SYNC_EN
pin now provides control between Synchronous and
Asynchronous operations. Having this control can be
advantageous in portable systems since
Asynchronous operations can be more efficient at
very light loads.
The LM2722 drives both top and bottom MOSFETs in
a push-pull structure simultaneously. It takes a logic
level PWM input and splits it into two complimentary
signals with a typical 20ns dead time in between. The
built-in cross-conduction protection circuitry prevents
the top and bottom FETs from turning on
simultaneously. The cross-conduction protection
circuitry detects both the driver outputs and will not
turn on a driver until the other driver output is low.
With a bias voltage of 5V, the peak sourcing and
sinking current for each driver of the LM2722 is
typically 3A. In an SOIC-8 package, each driver is
able to handle 50mA average current. Input UVLO
(Under-Voltage-Lock-Out) forces both driver outputs
low to ensure proper power-up and power-down
operation. The gate drive bias voltage needed by the
high side MOSFET is obtained through an external
bootstrap. Minimum pulse width is as low as 55ns.
Typical Application
Note: for ultra low-frequency operation (such as
skip mode at light load), D1 should be a fast
recovery type diode instead of a Schottky.
10
D1
+5
C2
1PF
6
SYNC_EN SIGNAL 5
PWM SIGNAL 4
8
LM2722
VCC CBOOT
SYNC_EN HG
PWM_IN SW
GND
LG
3
2
1
7
U1
C1
0.1PF
Q1
L1
Q2 D2
VIN (up to 35V)
+
CIN
VOUT
+
COUT
NOTE
TI is an Intel Mobile Voltage Positioning (IMVP) licensee.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2001–2013, Texas Instruments Incorporated

LM2722
LM2722
NRND
SNVS169D – NOVEMBER 2001 – REVISED MARCH 2013
Connection Diagram
SW
HG
CBOOT
PWM_IN
1
2
3
4
8 GND
7 LG
6 VCC
5 SYNC_EN
Figure 1. SOIC (D)
(Top View)
www.ti.com
Pin Functions
Pin Name
1 SW
2 HG
3 CBOOT
4 PWM_IN
5 SYNC_EN
6 VCC
7 LG
8 GND
Block Diagram
+4V ~ +7V
Pin Descriptions
Function
Top driver return. Should be connected to the common node of top and bottom FETs
Top gate drive output
Bootstrap. Accepts a bootstrap voltage for powering the high-side driver
Accepts a 5V-logic control signal
Low gate Enable
Connect to +5V supply
Bottom gate drive output
Ground
D1
CBYP
VCC
SYNC_EN
PWM_IN
Power
On
Reset
Logic
Shoot-through
Protection
CBOOT
HG
SW
+
-
VIN (up to 35V)
CIN
Q1
VOUT
COUT
Q2 D2
LG Items in bold
are external
to the IC.
GND
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2 Submit Documentation Feedback
Product Folder Links: LM2722
Copyright © 2001–2013, Texas Instruments Incorporated


Features NRND LM2722 www.ti.com SNVS169D – N OVEMBER 2001 – REVISED MARCH 2013 LM 2722 High Speed Synchronous/Asynchronou s MOSFET Driver Check for Samples: LM27 22 FEATURES 1 •2 Synchronous or Asyn chronous Operation • Adaptive Shoot-T hrough Protection • Input Under-Volta ge-Lock-Out • Typical 20ns Internal D elay • Plastic 8-pin SOIC package APP LICATIONS • Driver for LM2723 Intel M obile Northwood CPU Core Power Supply. • High Current DC/DC Power Supplies High Input Voltage Switching Regulat ors • Fast Transient Microprocessors DESCRIPTION The LM2722, part of the LM 2726 family, is designed to be used wit h multi-phase controllers. This part di ffers from the LM2726 by changing the f unctionality of the SYNC_EN pin from a whole chip enable to a low side MOSFET enable. As a result, the SYNC_EN pin no w provides control between Synchronous and Asynchronous operations. Having thi s control can be advantageous in portab le systems since Asynchronous operations can be more efficient at very light loads. T.
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