BTD1858I3 Transistor Datasheet

BTD1858I3 Datasheet, PDF, Equivalent


Part Number

BTD1858I3

Description

Silicon NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 7 Pages
Datasheet
Download BTD1858I3 Datasheet


BTD1858I3
CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1858I3
Spec. No. : C856I3
Issued Date : 2006.06.21
Revised Date : 2017.05.17
Page No. : 1/7
Description
High BVCEO
High current capability
Pb-free lead plating package
Symbol
BTD1858I3
Outline
TO-251AB
TO-251S
BBase
CCollector
EEmitter
B CE
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @TA=25
Power Dissipation @TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Single Pulse , Pw380μs,Duty2%.
BTD1858I3
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
180
160
5
1.5
3 (Note)
1
15
125
8.33
150
-55~+150
Unit
V
V
V
A
A
W
W
°C/W
°C/W
°C
°C
CYStek Product Specification

BTD1858I3
CYStech Electronics Corp.
Spec. No. : C856I3
Issued Date : 2006.06.21
Revised Date : 2017.05.17
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(on)
hFE1
hFE2
fT
Cob
Min.
180
160
5
-
-
-
-
-
180
30
-
-
Typ.
-
-
-
-
-
0.15
-
-
-
-
140
27
Max.
-
-
-
1
1
0.3
0.4
0.8
560
-
-
-
Unit
V
V
V
µA
µA
V
V
V
-
-
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=160V, IE=0
VEB=4V, IC=0
IC=1A, IB=100mA
IC=1A, IB=50mA
VCE=5V, IC=5mA
VCE=5V, IC=200mA
VCE=5V, IC=500mA
VCE=5V, IC=150mA
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Classification of hFE 1
Rank
Range
Q
180~390
R
270~560
Ordering Information
Device
BTD1858I3-Q-UA-S
BTD1858I3-R-UA-S
BTD1858I3S-Q-UA-S
BTD1858I3S-R-UA-S
BTD1858I3-Q-UA-G
BTD1858I3-R-UA-G
BTD1858I3S-Q-UA-G
BTD1858I3S-R-UA-G
HFE rank
Q
R
Q
R
Q
R
Q
R
Package
TO-251AB
(Pb-free lead plating)
TO-251AB
(Pb-free lead plating)
TO-251S
(Pb-free lead plating)
TO-251S
(Pb-free lead plating)
TO-251AB
(Pb-free lead plating and halogen-free package)
TO-251AB
(Pb-free lead plating and halogen-free package)
TO-251S
(Pb-free lead plating and halogen-free package)
TO-251S
(Pb-free lead plating and halogen-free package)
Shipping
80 pcs / tube, 50 tubes / box
80 pcs / tube, 50 tubes / box
80 pcs / tube, 50 tubes / box
80 pcs / tube, 50 tubes / box
80 pcs / tube, 50 tubes / box
80 pcs / tube, 50 tubes / box
80 pcs / tube, 50 tubes / box
80 pcs / tube, 50 tubes / box
BTD1858I3
CYStek Product Specification


Features CYStech Electronics Corp. Silicon NPN Ep itaxial Planar Transistor BTD1858I3 Sp ec. No. : C856I3 Issued Date : 2006.06. 21 Revised Date : 2017.05.17 Page No. : 1/7 Description • High BVCEO • Hi gh current capability • Pb-free lead plating package Symbol BTD1858I3 Outli ne TO-251AB TO-251S B:Base C:Coll ector E:Emitter B CE BCE Absolute Maximum Ratings (Ta=25°C) Parameter Co llector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissi pation @TC=25℃ Thermal Resistance, Ju nction to Ambient Thermal Resistance, J unction to Case Junction Temperature St orage Temperature Note : Single Pulse , Pw≦380μs,Duty≦2%. BTD1858I3 Symb ol VCBO VCEO VEBO IC ICP PD PD RθJA R JC Tj Tstg Limits 180 160 5 1.5 3 (No te) 1 15 125 8.33 150 -55~+150 Unit V V V A A W W °C/W °C/W °C °C CYStek Product Specification CYStech Electro nics Corp. Spec. No. : C856I3 Issued Date : 2006.06.21 Revised Date : 2017.05.17 Page No. .
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