AO4752 AlphaMOS Datasheet

AO4752 Datasheet, PDF, Equivalent


Part Number

AO4752

Description

30V N-Channel AlphaMOS

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
Datasheet
Download AO4752 Datasheet


AO4752
AO4752
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET)
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
30V
15A
< 8.8m
< 15.5m
Top View
D
D
D
D
SOIC-8
Bottom View
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.05mH C
ID
IDM
IAS
EAS
VDS Spike
100ns
VSPIKE
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
30
±20
15
12
102
22
12
36
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
A
mJ
V
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: April 2012
www.aosmd.com
Page 1 of 6

AO4752
AO4752
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
0.5
mA
100
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.5 2 2.5 V
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=15A
TJ=125°C
7.2 8.8
10.2 12.5
m
VGS=4.5V, ID=10A
12.3 15.5 m
gFS Forward Transconductance
VDS=5V, ID=15A
71 S
VSD Diode Forward Voltage
IS=0.2A,VGS=0V
0.45 0.65 V
IS Maximum Body-Diode Continuous Current
4A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
605
275
36.5
123
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
11 15 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=15A
5.5 8 nC
2 nC
Qgd Gate Drain Charge
2.6 nC
tD(on)
Turn-On DelayTime
5 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1,
2.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3
17 ns
tf Turn-Off Fall Time
3 ns
trr Body Diode Reverse Recovery Time IF=15A, dI/dt=500A/µs
11.5 ns
Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs
12.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: April 2012
www.aosmd.com
Page 2 of 6


Features AO4752 30V N-Channel AlphaMOS General D escription • Latest Trench Power Alph aMOS (αMOS LV) technology • Integrat ed Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers , and POL • Isolated DC/DC Converters in Telecom and Industrial Product Sum mary VDS ID (at VGS=10V) RDS(ON) (at VG S=10V) RDS(ON) (at VGS=4.5V) 100% UIS T ested 100% Rg Tested 30V 15A < 8.8mΩ < 15.5mΩ Top View D D D D SOIC-8 B ottom View D SRFETTM Soft Recovery MOS FET: Integrated Schottky Diode G S S S Absolute Maximum Ratings TA=25°C unl ess otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25 C Current TA=70°C Pulsed Drain Cur rent C Avalanche Current C Avalanche energy L=0.05mH C ID IDM IAS EAS VDS Spike 100ns VSPIKE TA=25°C Power Di ssipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum 3.
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