MMDL914

MMDL914 High-Speed Switching Diode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Reverse Voltage Forward Current Non−Repetitive Peak Forward Surge Current 60 Hz Repetitive Peak Forward Current (Note 2) Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t = 10 ms t = 100 ms t=1s Symbol VR IF IFSM(surge) IFRM IFSM Value 100 200 1.8 1.0 36.0 18.0 6.0 3.0 1.8 1.3 1.0 Unit V mA A A A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board TA = 25°C (Note 1) Derate above 25°C PD 200 mW 1.57 mW/°C Thermal Resistance, Junction−to−Ambient RqJA °C/W 635 Junction and Storage Temperature TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR-4 Minimum Pad. 2. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, TJ = 25°C prior to surge. www.onsemi.com SOD−323 CASE 477 STYLE 1 1 CATHODE 2 ANODE MARKING DIAGRAM 5D M G G 5D = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MMDL914T1G SMMDL914T1G MMDL...