MMDL914 Diode Datasheet

MMDL914 Datasheet, PDF, Equivalent


Part Number

MMDL914

Description

High-Speed Switching Diode

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download MMDL914 Datasheet


MMDL914
MMDL914
High-Speed Switching
Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
NonRepetitive Peak Forward Surge
Current 60 Hz
Repetitive Peak Forward Current
(Note 2)
NonRepetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 10 ms
t = 100 ms
t=1s
Symbol
VR
IF
IFSM(surge)
IFRM
IFSM
Value
100
200
1.8
1.0
36.0
18.0
6.0
3.0
1.8
1.3
1.0
Unit
V
mA
A
A
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
TA = 25°C (Note 1)
Derate above 25°C
PD
200 mW
1.57 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
°C/W
635
Junction and Storage Temperature
TJ, Tstg 55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR-4 Minimum Pad.
2. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, TJ = 25°C prior to surge.
www.onsemi.com
SOD323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
MARKING DIAGRAM
5D M G
G
5D = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMDL914T1G
SMMDL914T1G
MMDL914T3G
Package
SOD323
(PbFree)
SOD323
(PbFree)
SOD323
(PbFree)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
February, 2019 Rev. 10
1
Publication Order Number:
MMDL914T1/D

MMDL914
MMDL914
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 mAdc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
Forward Voltage
(IF = 10 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
Symbol
V(BR)
IR
CT
VF
trr
Min
100
Max Unit
Vdc
25 nAdc
5.0 mAdc
pF
4.0
Vdc
1.0
ns
4.0
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2


Features MMDL914 High-Speed Switching Diode Fea tures • S Prefix for Automotive and O ther Applications Requiring Unique Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable • Th ese Devices are Pb−Free, Halogen Free /BFR Free and are RoHS Compliant MAXIM UM RATINGS Rating Reverse Voltage Forwa rd Current Non−Repetitive Peak Forwar d Surge Current 60 Hz Repetitive Peak F orward Current (Note 2) Non−Repetitiv e Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 0 ms t = 100 ms t = 1 ms t = 10 ms t = 100 ms t=1s Symbol VR IF IFSM(surge) I FRM IFSM Value 100 200 1.8 1.0 36.0 18 .0 6.0 3.0 1.8 1.3 1.0 Unit V mA A A A THERMAL CHARACTERISTICS Characterist ic Symbol Max Unit Total Device Dis sipation FR-5 Board TA = 25°C (Note 1) Derate above 25°C PD 200 mW 1.57 mW /°C Thermal Resistance, Junction−to −Ambient RqJA °C/W 635 Junction a nd Storage Temperature TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage th.
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