NRVBA340N Rectifier Datasheet

NRVBA340N Datasheet, PDF, Equivalent


Part Number

NRVBA340N

Description

Surface Mount Schottky Power Rectifier

Manufacture

ON Semiconductor

Total Page 6 Pages
Datasheet
Download NRVBA340N Datasheet


NRVBA340N
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
MBRA340, NRVBA340,
SBRA340T3G, NRVBA340N
Employing the Schottky Barrier principle in a large area
metaltosilicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with JBent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 70 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Device Meets MSL 1 Requirements
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
40 VOLTS
SMA
CASE 403D
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
A34
AYWWG
A34 = Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
ORDERING INFORMATION
Device
Package
MBRA340T3G
NRVBA340T3G
SMA
NRVBA340T3GVF01 (PbFree)
SBRA340T3G
NRVBA320NT3G*
Shipping
5,000 /
Tape & Reel
© Semiconductor Components Industries, LLC, 2013
December, 2019 Rev. 10
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
MBRA340T3/D

NRVBA340N
MBRA340, NRVBA340, SBRA340T3G, NRVBA340N
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 100°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFSM
40
3.0
100
V
A
A
Storage/Operating Case Temperature
Tstg, TC
55 to +150
°C
Operating Junction Temperature (Note 1)
TJ 55 to +150 °C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance JunctiontoLead (Note 2)
Thermal Resistance JunctiontoAmbient (Note 2)
2. Mounted on 2Square PC Board with 1Square Total Pad Size, PC Board FR4.
Symbol
RRθθJJAL
Value
15
81
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
VF
TJ = 25°C
TJ = 100°C
Volts
(IF = 3.0 A)
0.450
0.390
Maximum Instantaneous Reverse Current
IR
TJ = 25°C
TJ = 100°C
mA
(VR = 40 V)
0.3 15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 250 μs, Duty Cycle 2.0%.
TYPICAL CHARACTERISTICS
10 10
1 TJ = 125°C
0.1
0.10
TJ = 100°C TJ = 25°C TJ = 55°C
0.20 0.30 0.40
0.50
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1
TJ = 125°C
TJ = 100°C
0.1
0.10
TJ = 25°C
TJ = 55°C
0.20 0.30 0.40 0.50
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 2. Maximum Forward Voltage
0.60
www.onsemi.com
2


Features Surface Mount Schottky Power Rectifier S MA Power Surface Mount Package MBRA340 , NRVBA340, SBRA340T3G, NRVBA340N Emplo ying the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry featu res epitaxial construction with oxide p assivation and metal overlay contact. I deally suited for low voltage, high fre quency rectification, or as free wheeli ng and polarity diodes in surface mount applications where compact size and we ight are critical to the system. Featur es • Small Compact Surface Mountable Package with J−Bent Leads • Rectang ular Package for Automated Handling • Highly Stable Oxide Passivated Junctio n • Very Low Forward Voltage Drop • Guardring for Stress Protection • NR VBA Prefix for Automotive and Other App lications Requiring Unique Site and Con trol Change Requirements; AEC−Q101 Qu alified and PPAP Capable* • These Dev ices are Pb−Free, Halogen Free/BFR Fr ee and are RoHS Compliant Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 7.
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