VSMB14940 Diodes Datasheet

VSMB14940 Datasheet, PDF, Equivalent


Part Number

VSMB14940

Description

High Speed Infrared Emitting Diodes

Manufacture

Vishay

Total Page 6 Pages
Datasheet
Download VSMB14940 Datasheet


VSMB14940
www.vishay.com
VSMB14940
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
DESCRIPTION
VSMB14940 is an infrared, 940 nm, side looking emitting
diode in GaAlAs multi quantum well (MQW) technology
with high radiant power and high speed, molded in
clear, untinted PCB based package (with lens) for surface
mounting (SMD).
APPLICATIONS
• Emitter for remote control
• IR touch panels
• Photointerrupters
• Optical switch
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 3.2 x 2.51 x 1.2
• Peak wavelength: p = 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: = ± 9°
• Suitable for high pulse current operation
• Floor life: 168 h, MSL 3, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
COMPONENT
VSMB14940
Ie (mW/sr)
35
Note
• Test conditions see table “Basic Characteristics“
(deg)
±9
p (nm)
940
tr (ns)
15
ORDERING INFORMATION
ORDERING CODE
VSMB14940
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 1500 pcs, 1500 pcs/reel
PACKAGE FORM
Side view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction / ambient
tp = 100 μs
According fig. 10, J-STD-020
J-STD-051, soldered on PCB
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
5
70
500
112
100
-40 to +85
-40 to +100
260
580
UNIT
V
mA
mA
mW
°C
°C
°C
°C
K/W
Rev. 1.2, 19-Nov-15
1 Document Number: 84210
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VSMB14940
www.vishay.com
VSMB14940
Vishay Semiconductors
120
100
80
60
40
RthJA = 580 K/W
20
0
0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
80
70
60
50
40
30
20 RthJA = 580 K/W
10
0
0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
IF = 20 mA, tp = 20 ms
VF 1.05
Forward voltage
IF = 70 mA, tp = 20 ms
VF -
IF = 500 mA, tp = 100 μs VF -
Temperature coefficient of VF
IF = 20 mA
TKVF
-
Reverse current
Junction capacitance
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
IR
CJ
-
-
IF = 20 mA, tp = 20 ms
Ie 6.5
Radiant intensity
IF = 70 mA, tp = 20 ms
Ie -
Radiant power
IF = 500 mA, tp = 100 μs Ie -
IF = 70 mA, tp = 20 ms
e -
Temperature coefficient of radiant
power
IF = 20 mA
TKe
-
Angle of half intensity
-
Peak wavelength
Spectral bandwidth
Temperature coefficient of p
IF = 70 mA
IF = 30 mA
IF = 30 mA
p

TKp
920
-
-
Rise time
IF = 100 mA, 20 % to 80 %
tr
-
Fall time
IF = 100 mA, 20 % to 80 %
tf
-
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYP.
1.24
1.33
1.8
-1.12
-
38
10.5
35
205
28
0.39
±9
940
30
0.30
15
15
MAX.
1.5
1.6
-
-
10
-
14.5
-
-
-
-
-
960
-
-
-
-
UNIT
V
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
1000
tp = 100 µs
100
10
1
1.0 1.2 1.4 1.6
1.8 2.0
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
1.34
1.32 IF = 20 mA
1.30
1.28
1.26
1.24
1.22
1.20
1.18
-60 -40 -20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 4 - Forward Voltage vs. Ambient Temperature
Rev. 1.2, 19-Nov-15
2 Document Number: 84210
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com VSMB14940 Vishay Semicon ductors High Speed Infrared Emitting D iodes, 940 nm, GaAlAs, MQW DESCRIPTION VSMB14940 is an infrared, 940 nm, side looking emitting diode in GaAlAs multi quantum well (MQW) technology with hig h radiant power and high speed, molded in clear, untinted PCB based package (w ith lens) for surface mounting (SMD). A PPLICATIONS • Emitter for remote cont rol • IR touch panels • Photointerr upters • Optical switch FEATURES • Package type: surface mount • Packag e form: side view • Dimensions (L x W x H in mm): 3.2 x 2.51 x 1.2 • Peak wavelength: p = 940 nm • High reli ability • High radiant power • Very high radiant intensity • Angle of ha lf intensity:  = ± 9° • Suitable for high pulse current operation • F loor life: 168 h, MSL 3, according to J -STD-020 • Material categorization: f or definitions of compliance please see www.vishay.com/doc?99912        PRODUCT SUMMARY COMPONENT VSMB14940 Ie (mW/sr) 35 Note • Test conditions see table “Basic Cha.
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