VS-30EPH06HN3 Rectifier Datasheet

VS-30EPH06HN3 Datasheet, PDF, Equivalent


Part Number

VS-30EPH06HN3

Description

Hyperfast Rectifier

Manufacture

Vishay

Total Page 8 Pages
Datasheet
Download VS-30EPH06HN3 Datasheet


VS-30EPH06HN3
www.vishay.com
VS-30EPH06HN3
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt®
Base
common
cathode
2
TO-247AC modified
1
Cathode
3
Anode
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VR 600 V
VF at IF
1.34 V
trr typ.
TJ max.
See Recovery table
175 °C
Package
TO-247AC modified
Circuit configuration
Single
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Single diode device
• AEC-Q101 qualified, meets JESD 201
class 1A whisker test
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
VRRM
IF(AV)
IFSM
Operating junction and storage temperatures TJ, TStg
TEST CONDITIONS
TC = 116 °C
TJ = 25 °C
VALUES
600
30
300
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
600
Forward voltage
IF = 30 A
VF
IF = 30 A, TJ = 150 °C
-
-
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 600 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
2.0
1.34
0.3
60
33
3.5
MAX.
-
2.6
1.75
50
500
-
-
UNITS
V
μA
pF
nH
Revision: 05-Nov-2018
1 Document Number: 94371
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-30EPH06HN3
www.vishay.com
VS-30EPH06HN3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 30 A
dIF/dt = 200 A/μs
VR = 200 V
TJ = 125 °C
-
-
-
-
-
-
-
28
31
77
3.5
7.7
65
345
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
TJ, TStg
RthJC
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
0.5 0.9
- 70
0.4 -
6.0 -
0.22 -
12
-
(10)
30EPH06H
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
Revision: 05-Nov-2018
2 Document Number: 94371
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com VS-30EPH06HN3 Vishay Sem iconductors Hyperfast Rectifier, 30 A FRED Pt® Base common cathode 2 TO-24 7AC modified 1 Cathode 3 Anode PRIMA RY CHARACTERISTICS IF(AV) 30 A VR 60 0 V VF at IF 1.34 V trr typ. TJ max. See Recovery table 175 °C Package TO-247AC modified Circuit configuratio n Single FEATURES • Hyperfast recov ery time • Low forward voltage drop 175 °C operating junction temperatu re • Low leakage current • Single d iode device • AEC-Q101 qualified, mee ts JESD 201 class 1A whisker test • M aterial categorization: for definiti ons of compliance please see www.vishay .com/doc?99912 DESCRIPTION / APPLICATIO NS State of the art hyperfast recovery rectifiers designed with optimized perf ormance of forward voltage drop, hyperf ast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the b est overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage.
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