VS-6CVH01-M3 Rectifier Datasheet

VS-6CVH01-M3 Datasheet, PDF, Equivalent


Part Number

VS-6CVH01-M3

Description

Hyperfast Rectifier

Manufacture

Vishay

Total Page 7 Pages
Datasheet
Download VS-6CVH01-M3 Datasheet


VS-6CVH01-M3
www.vishay.com
VS-6CVH01-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 3 A FRED Pt®
eSMP® Series
1
2
3
SlimDPAK (TO-252AE)
Base
common
cathode
4
4
2
Common
cathode
1
Anode
3
Anode
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
FEATURES
• Hyperfast recovery time
• 175 °C operating junction temperature
• Low forward voltage drop reduced Qrr and
soft recovery
• Low leakage current
• Very low profile - typical height of 1.3 mm
• Ideal for automated placement
• Polyimide passivation for high reliability standard
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
2x3A
VR
VF at IF
100 V
0.75 V
trr (typ.)
20 ns
TJ max.
175 °C
Package
SlimDPAK (TO-252AE)
Circuit configuration
Common cathode
DESCRIPTION / APPLICATIONS
State of the art hyper fast recovery rectifiers designed with
optimized performance of forward voltage drop and
hyper fast recovery time.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
per leg
Average rectified forward current
per device
Non-repetitive peak surge current per leg
Operating junction and storage temperatures
SYMBOL
VRRM
TEST CONDITIONS
IF(AV)
Total device, rated VR, TC = 166 °C
IFSM
TJ, TStg
TJ = 25 °C, 10 ms sine pulse wave
MAX.
100
3
6
70
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
IF = 3 A
Forward voltage
IF = 3 A, TJ = 150 °C
VF
IF = 6 A
IF = 6 A, TJ = 150 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 100 V
MIN.
100
-
-
-
-
-
-
-
TYP.
-
0.9
0.75
1
0.85
-
-
12
MAX.
-
1.04
0.82
1.2
1.01
5
80
-
UNITS
V
μA
pF
Revision: 08-Jul-2019
1 Document Number: 96091
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-6CVH01-M3
www.vishay.com
VS-6CVH01-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
IF = 0.5 A, IR = 1 A, IRR = 0.25 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 3 A
dIF/dt = 200 A/μs
VR = 160 V
TJ = 125 °C
-
-
-
-
-
-
-
-
TYP.
20
-
17
26
1.8
3.2
15
41
MAX.
-
25
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
Thermal resistance, junction to ambient
Thermal resistance, junction to case, per leg
Marking device
TJ, TStg
RthJA (1)(2)
RthJC (3)
Case style SlimDPAK (TO-252AE)
MIN.
-55
-
-
Notes
(1) The heat generated must be less than thermal conductivity from junction to ambient; dPD/dTJ < 1RthJA
(2) Free air, mounted or recommended copper pad area; thermal resistance RthJA - junction to ambient
(3) Mounted on infinite heatsink
TYP. MAX.
- 175
75 90
3.2 4
6CVH01
UNITS
°C
°C/W
°C/W
100
10
TJ = 175 °C
1
TJ = -40 °C
0.1
0.2
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.4 0.6 0.8 1.0 1.2 1.4
VF - Forward Voltage Drop (V)
1.6
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
175 °C
10 150 °C
125 °C
1
0.1
25 °C
0.01
0.001
0
25 50 75 100 125 150 175 200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 08-Jul-2019
2 Document Number: 96091
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com VS-6CVH01-M3 Vishay Semi conductors Hyperfast Rectifier, 2 x 3 A FRED Pt® eSMP® Series 1 2 3 SlimDP AK (TO-252AE) Base common cathode 4 4 2 Common cathode 1 Anode 3 Anode DE SIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D M odels FEATURES • Hyperfast recovery time • 175 °C operating junction tem perature • Low forward voltage drop r educed Qrr and soft recovery • Low le akage current • Very low profile - ty pical height of 1.3 mm • Ideal for au tomated placement • Polyimide passiva tion for high reliability standard • Meets MSL level 1, per J-STD-020, LF ma ximum peak of 260 °C • Meets JESD 20 1 class 2 whisker test • Material cat egorization: for definitions of complia nce please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 2x3A VR VF at IF 100 V 0.75 V trr (typ.) 20 ns TJ max. 175 °C Package Sli mDPAK (TO-252AE) Circuit configuration Common cathode DESCRIPTION / APPLICA TIONS State of the art hyper fast recovery rectifiers designed with optimized performanc.
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