VS-30BQ040HM3 Rectifier Datasheet

VS-30BQ040HM3 Datasheet, PDF, Equivalent


Part Number

VS-30BQ040HM3

Description

High Performance Schottky Rectifier

Manufacture

Vishay

Total Page 7 Pages
Datasheet
Download VS-30BQ040HM3 Datasheet


VS-30BQ040HM3
www.vishay.com
VS-30BQ040HM3
Vishay Semiconductors
High Performance Schottky Rectifier, 3.0 A
Cathode
Anode
SMC (DO-214AB)
PRIMARY CHARACTERISTICS
IF(AV)
VR
VF at IF
IRM
TJ max.
EAS
Package
3.0 A
40 V
0.46 V
30 mA at 125 °C
150 °C
6.0 mJ
SMC (DO-214AB)
Circuit configuration
Single
FEATURES
• Very low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-30BQ040HM3 surface-mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
3.0 Apk, TJ = 125 °C
Range
VALUES
3.0
40
1600
0.46
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-30BQ040HM3
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
IFSM
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TL = 115 °C, rectangular waveform
50 % duty cycle at TL = 104 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 1.0 A, L = 12 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
3.0
4.0
1600
90
6.0
1.0
UNITS
A
mJ
A
Revision: 18-Apr-2019
1 Document Number: 94843
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-30BQ040HM3
www.vishay.com
VS-30BQ040HM3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
TEST CONDITIONS
3A
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.57
0.76
0.46
0.64
0.5
30
230
3.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
RthJL (2)
RthJA
DC operation
Approximate weight
Marking device
Case style SMC (DO-214AB)
Notes
(1) d--d--P--T---t-Jo---t < -R----t-1-h--J---A-- thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
VALUES
-55 to +150
UNITS
°C
12
46
0.24
0.008
3F
°C/W
g
oz.
Revision: 18-Apr-2019
2 Document Number: 94843
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com VS-30BQ040HM3 Vishay Sem iconductors High Performance Schottky Rectifier, 3.0 A Cathode Anode SMC ( DO-214AB) PRIMARY CHARACTERISTICS IF( AV) VR VF at IF IRM TJ max. EAS Package 3.0 A 40 V 0.46 V 30 mA at 125 °C 15 0 °C 6.0 mJ SMC (DO-214AB) Circuit co nfiguration Single FEATURES • Very low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Small foot print, surfa ce mountable • High frequency operati on • Meets MSL level 1, per J-STD-020 , LF maximum peak of 260 °C • Meets JESD 201 class 2 whisker test • AEC-Q 101 qualified • Material categorizati on: for definitions of compliance pleas e see www.vishay.com/doc?99912 DESCRIPT ION The VS-30BQ040HM3 surface-mount Sch ottky rectifier has been designed for a pplications requiring low forward drop and small foot prints on PC boards. Typ ical applications are in disk drives, s witching power supplies, converters, fr eewheeling diodes, battery charging, and reverse battery protection. MAJOR RATIN.
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