VS-12TTS08HM3 Thyristor Datasheet

VS-12TTS08HM3 Datasheet, PDF, Equivalent


Part Number

VS-12TTS08HM3

Description

Phase Control Thyristor

Manufacture

Vishay

Total Page 7 Pages
Datasheet
Download VS-12TTS08HM3 Datasheet


VS-12TTS08HM3
www.vishay.com
VS-12TTS08HM3
Vishay Semiconductors
High Voltage, Phase Control Thyristor, 12 A
2
(A)
1 23
TO-220AB
1 (K) (G) 3
PRIMARY CHARACTERISTICS
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
Package
8A
800 V
1.2 V
15 mA
-40 to +125 °C
TO-220AB
Circuit configuration
Single SCR
FEATURES
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
• Flexible solution for reliable AC power
rectification
• Easy control peak current at charger power
up to reduce passive / electromechanical
components
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
The VS-12TTS08HM3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter TA = 55 °C, TJ = 125 °C,
common heatsink of 1 °C/W
13.5
THREE-PHASE BRIDGE
17
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
VRRM/VDRM
ITSM
VT
dV/dt
Sinusoidal waveform
8 A, TJ = 25 °C
dI/dt
TJ Range
VOLTAGE RATINGS
PART NUMBER
VS-12TTS08HM3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
VALUES
8
12.5
800
110
1.2
150
100
-40 to +125
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
UNITS
A
V
A
V
V/μs
A/μs
°C
IRRM / IDRM
AT 125 °C
mA
5.0
Revision: 04-Jun-2018
1 Document Number: 96538
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-12TTS08HM3
www.vishay.com
VS-12TTS08HM3
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum RMS on-state current
Maximum peak one-cycle
non-repetitive surge current
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
I2t
VTM
rt
VT(TO)
Maximum reverse and direct leakage current IRM/IDM
Typical holding current
Typical latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
IH
IL
dV/dt
dI/dt
TEST CONDITIONS
TC = 108 °C, 180° conduction, half sine wave
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C
8 A, TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = rated VRRM / VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A,
TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
TJ = TJ max., linear to 80 %, VDRM = Rg - k = open
VALUES
8
12.5
95
110
45
64
640
1.2
16.2
0.87
0.05
5.0
30
50
150
100
UNITS
A
A2s
A2s
V
m
V
mA
V/μs
A/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
PGM
PG(AV)
+IGM
-VGM
Maximum required DC gate current to trigger
IGT
Maximum required DC gate voltage to trigger VGT
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
VGD
IGD
TEST CONDITIONS
Anode supply = 6 V, resistive load, TJ = - 65 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = -65 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
TJ = 125 °C, VDRM = rated value
VALUES
8.0
2.0
1.5
10
20
15
10
1.2
1
0.7
0.2
0.1
UNITS
W
A
V
mA
V
mA
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
tgt
trr
tq
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
VALUES
0.8
3
100
UNITS
μs
Revision: 04-Jun-2018
2 Document Number: 96538
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com VS-12TTS08HM3 Vishay Sem iconductors High Voltage, Phase Contro l Thyristor, 12 A 2 (A) 1 23 TO-220AB 1 (K) (G) 3 PRIMARY CHARACTERISTICS IT(AV) VDRM/VRRM VTM IGT TJ Package 8 A 800 V 1.2 V 15 mA -40 to +125 °C TO- 220AB Circuit configuration Single SC R FEATURES • AEC-Q101 qualified • Meets JESD 201 class 1A whisker test Flexible solution for reliable AC pow er rectification • Easy control peak current at charger power up to reduce p assive / electromechanical components Material categorization: for definit ions of compliance please see www.visha y.com/doc?99912 APPLICATIONS • On-boa rd and off-board EV / HEV battery charg ers • Renewable energy inverters DESC RIPTION The VS-12TTS08HM3 high voltage series of silicon controlled rectifiers are specifically designed for medium p ower switching and phase control applic ations. OUTPUT CURRENT IN TYPICAL APPL ICATIONS APPLICATIONS SINGLE-PHASE BR IDGE Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °.
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