FDD5810-F085 MOSFET Datasheet

FDD5810-F085 Datasheet, PDF, Equivalent


Part Number

FDD5810-F085

Description

N-Channel Logic Level Trench MOSFET

Manufacture

ON Semiconductor

Total Page 7 Pages
Datasheet
Download FDD5810-F085 Datasheet


FDD5810-F085
FDD5810-F085
N-Channel Logic Level Trench®MOSFET
60V, 36A, 27m:
Applications
Features
„ RDS(ON) = 22m: Typ.), VGS = 5V, ID = 29A
„ Qg(5) = 13nC (Typ.), VGS = 5V
„ Low Miller Charge
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse / Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
„ Motor / Body Load Control
„ ABS Systems
„ Powertrain Management
„ Injection System
„ DC-DC converters and Off-line UPS
„ Distributed Power Architecture and VRMs
„ Primary Switch for 12V and 24V systems
AD FREE I
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
©2010 Semiconductor Components Industries, LLC.
September-2017,Rev.1
Publication Order Number:
FDD5810-F085/D

FDD5810-F085
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (VGS = 10V)
Drain Current Continuous (VGS = 5V)
Continuous (TA = 25oC, VGS = 10V, with RTJA = 52oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
Power Dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Ratings
60
r20
37
33
7.4
Figure 4
45
72
0.48
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RTJC
RTJA
Maximum Thermal resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
2.1
52
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDD5810
Device
FDD5810-F085
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250PA, VGS = 0V
VDS = 48V
VGS = 0V
TC = 150oC
VGS = r20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
RDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250PA
ID = 32A, VGS = 10V
ID = 29A, VGS = 5V
ID = 32A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
Ciss
Coss
Crss
RG
Qg
Qg
Qg(th)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 30V
ID = 35A
Min Typ Max Units
60 - - V
- -1
PA
- - 250
- - r100 nA
1 1.6 2
V
- 18 22
- 22 27 m:
- 43 53
- 1420 1890 pF
- 150 200 pF
- 65 100 pF
- 3.5 -
:
- 24 34 nC
- 13 18 nC
- 1.3 - nC
- 4.0 - nC
- 2.7 - nC
- 5.0 - nC
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Features FDD5810-F085 N-Channel Logic Level Trenc h® MOSFET MPLEMENTATION FDD5810-F085 N-Channel Logic Level Trench®MOSFET 6 0V, 36A, 27m: Applications Features „ RDS(ON) = 22m: Typ.), VGS = 5V, ID = 29A „ Qg(5) = 13nC (Typ.), VGS = 5V „ Low Miller Charge „ Low Qrr Body Diod e „ UIS Capability (Single Pulse / Rep etitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant „ Motor / Body Loa d Control „ ABS Systems „ Powertrain Management „ Injection System „ DC-DC converters and Off-line UPS „ Distrib uted Power Architecture and VRMs „ Pri mary Switch for 12V and 24V systems AD FREE I LE D G S DTO-P-2A5K2 (TO-252) D G S ©2010 Semiconductor Components Industries, LLC. September-2017,Rev.1 Publication Order Number: FDD5810-F085 /D FDD5810-F085 N-Channel Logic Level Trench® MOSFET Absolute Maximum Ratin gs TC = 25°C unless otherwise noted S ymbol VDSS VGS ID Parameter Drain to S ource Voltage Gate to Source Voltage Dr ain Current Continuous (VGS = 10V) Drain Current Continuous (VGS = 5V) Continuous .
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