BTD2114N3

CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 1/8 High Current Gain Medium Power NPN Epitaxial Planar Transistor AUDIO MUTING APPLICATION BTD2114N3 BVCEO IC 20V 500mA RCE(SAT) 0.32Ω(typ) Features High Emitter-Base voltage, VEBO=12V(min). High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA. Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA. Pb-free and halogen-free package. Symbol BTD2114N3 Outline SOT-23 C B：Base C：Collector E：Emitter E B Ordering Information Device BTD2114N3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 :3000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTD2114N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IB PD RθJA Tj ; Tstg Limit 30 20 12 500 1 50 225 556 -55~+150 Unit V V V mA A mA mW °C/W °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ...