BTD2114N3 Transistor Datasheet

BTD2114N3 Datasheet, PDF, Equivalent


Part Number

BTD2114N3

Description

High Current Gain Medium Power NPN Epitaxial Planar Transistor

Manufacture

CYStech

Total Page 8 Pages
Datasheet
Download BTD2114N3 Datasheet


BTD2114N3
CYStech Electronics Corp.
Spec. No. : C857N3
Issued Date : 2012.01.02
Revised Date : 2017.12.05
Page No. : 1/8
High Current Gain Medium Power NPN Epitaxial Planar Transistor
AUDIO MUTING APPLICATION
BTD2114N3
BVCEO
IC
20V
500mA
RCE(SAT) 0.32Ω(typ)
Features
High Emitter-Base voltage, VEBO=12V(min).
High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA.
Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.
Pb-free and halogen-free package.
Symbol
BTD2114N3
Outline
SOT-23
C
BBase
CCollector
EEmitter
E
B
Ordering Information
Device
BTD2114N3-0-T1-G
Package
Shipping
SOT-23
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 :3000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTD2114N3
CYStek Product Specification

BTD2114N3
CYStech Electronics Corp.
Spec. No. : C857N3
Issued Date : 2012.01.02
Revised Date : 2017.12.05
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
RθJA
Tj ; Tstg
Limit
30
20
12
500
1
50
225
556
-55~+150
Unit
V
V
V
mA
A
mA
mW
°C/W
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Ron
Min.
30
20
12
-
-
-
-
-
-
1200
900
-
-
-
Typ.
-
-
-
-
-
35
0.16
0.32
0.79
-
-
300
9
0.8
Max.
-
-
-
100
100
100
0.3
0.6
1
2700
-
-
-
-
Unit
V
V
V
nA
nA
mV
V
Ω
V
-
-
MHz
pF
Ω
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IE=10μA, IC=0
VCB=30V, IE=0
VEB=12V, IC=0
IC=100mA, IB=10mA
IC=500mA, IB=20mA
IC=500mA, IB=20mA
IC=100mA, IB=10mA
VCE=3V, IC=10mA
VCE=3V, IC=100mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
IB=1mA, Vi=100mV(rms), f=1KHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
BTD2114N3
CYStek Product Specification


Features CYStech Electronics Corp. Spec. No. : C 857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No. : 1/8 High Current Gain Medium Power NPN Epitaxial Planar Transistor AUDIO MUTING APPLIC ATION BTD2114N3 BVCEO IC 20V 500mA RCE(SAT) 0.32Ω(typ) Features • High Emitter-Base voltage, VEBO=12V(min). High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA. • Low VCESAT, VCES AT=0.16V typ. @ IC=500mA, IB=20mA. • Pb-free and halogen-free package. Symb ol BTD2114N3 Outline SOT-23 C B:Ba se C:Collector E:Emitter E B Orde ring Information Device BTD2114N3-0-T1 -G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment fr iendly grade : S for RoHS compliant pro ducts, G for RoHS compliant and green c ompound products Packing spec, T1 :3000 pcs/tape & reel, 7” reel Product ran k, zero for no rank products Product na me BTD2114N3 CYStek Product Specifica tion CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2012.01.02 Rev.
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